Avalanche photodiode featuring Germanium-tin multiple quantum wells on silicon: Extending photodetection to wavelengths of 2 and beyond

Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Loke, Wan Khai; Yoon, S. F.; Liang, Gengchiau; Yeo, Yee-Chia

doi:10.1109/iedm.2015.7409802

Cited by 6 publications

(6 citation statements)

References 6 publications

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“… Cross-sectional schematic of GeSn/Ge MQWs APD with SACM structure. Reproduced with permission from [ 75 ], IEEE, 2015. …”

Section: Figurementioning

confidence: 99%

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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“… Cross-sectional schematic of GeSn/Ge MQWs APD with SACM structure. Reproduced with permission from [ 75 ], IEEE, 2015. …”

Section: Figurementioning

confidence: 99%

“… Optical responsivity for GeSn/Ge MQWs APD is biased at different voltages. Reproduced with permission from [ 75 ], IEEE, 2015. …”

Section: Figurementioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…The research interest on high-performance Avalanche PhotoDiodes (APDs), which exhibit an internal carrier multiplication mechanism caused by internal avalanche gain [1][2][3][4][5] , has been increasing with the development of optical fiber communication. APDs must have a very low noise and a high response to increase sensitivity in low-light-level detection.…”

Section: Introductionmentioning

confidence: 99%

Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

Zheng

et al. 2019

Tinshhua Sci. Technol.

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A novel lateral Ge=Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge=Si interface in the vertical direction. Modulating the Si mesa thickness (0 0:4 m) and impurity concentration of the intrinsic Si substrate (1 10 16 4 10 16 cm 3 ) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0:3 m, and the impurity concentration of the Si substrate is 2 10 16 cm 3 , the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of 246 under 1:55 m incident light power of 22:2 dBm, which increases with decreasing light intensity.

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“…With the development of optical fiber communications and the continuing expansion of optical-fiber networks, researchers are now focused on high performance near infrared photo detectors for long distance optical communications [1,2] . With their ability to amplify optical signals without an external circuit and thereby improve the signal-to-noise ratio, Ge/Si avalanche photo diodes (APDs) in which the inner gain is generated by avalanche ionization have excellent performance in the detection of weak infrared optical signals, including in the 1.55 μm band, which greatly increases the optical signal propagation distance [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

Cheng

Zheng

et al. 2017

J. Semicond.

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This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode (TAPD) with an ultra-thin barrier layer between the absorption and p + contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the −3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and −3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer. When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.

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Avalanche photodiode featuring Germanium-tin multiple quantum wells on silicon: Extending photodetection to wavelengths of 2 and beyond

Cited by 6 publications

References 6 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

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