Avalanche Photodiodes Based on the AlInAsSb Materials System

Bank, Seth R.; Campbell, Joe C.; Maddox, Scott J.; Ren, Min; Rockwell, Ann K.; Woodson, Madison; March, Stephen D.

doi:10.1109/jstqe.2017.2737880

Cited by 35 publications

(13 citation statements)

References 32 publications

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“…While a material such as InAs 11 has a very large α/β ratio, it also has a very narrow band-gap and cannot be grown lattice matched to InP. Recent publications have suggested that the AlInAsSb 12 , 13 alloy also may have a large α/β ratio (~50–100), based on the evidence of very low excess noise measurements in thick avalanching structures. This alloy has a relatively large band-gap (at the higher aluminium mole fractions) with low dark currents at room temperature but it needs to be grown on more expensive GaSb substrates.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

Xie

Liang

et al. 2018

Sci Rep

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The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220–1250 kV/cm for α and from 360–1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

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Section: Introductionmentioning

confidence: 99%

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

Xie

Liang

et al. 2018

Sci Rep

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“…Fig. 5c shows that the Fe results at M = 10 in these AlAsSb structures, compared with other materials such as Si [27], AlInAs [28] and AlInAsSb [14]. Only InAs [29] appears capable of giving a significantly lower value of excess noise.…”

Section: Excess Noisementioning

confidence: 86%

“…Unfortunately, this small bandgap means room temperature operation of these devices is not possible and some form of cooling is required to reduce their dark currents. Recently, Campbell et al [14,15] showed that the AlInAsSb alloy had a small β/α ratio and excess noise that was comparable to, or superior to that of silicon. This material has a large bandgap of 1.24 eV and can operate at room temperature, however it has to be grown lattice matched on GaSb substrates.…”

Section: Introductionmentioning

confidence: 99%

Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xie

Liang

et al. 2020

Emerging Imaging and Sensing Technologies for Security and Defence V; And Advanced Manufacturing Technologies for Micro- And Na

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This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-in and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6-1.5 µm. From these, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric field range of 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. Excess noise characteristics suggest an β/α ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of-32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

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“…4(a)). With increased reverse bias, a surge in photocurrent was observed at $À2 V, which plateaued at À3 V. This is a typical signature of punch-through voltage or unity gain point 35 corresponding to the depletion region extending to the absorption region edge. Therefore, À3 V was considered the unity gain (UG) point providing a conservative estimate to avoid overestimating the gain in our NW APDs.…”

Section: Current-voltage (I-v) Measurementsmentioning

confidence: 94%