Avoidance of RF plasma extraction transit-time oscillations using 3-D EMC simulation: chances and limits

Siemieniec, Ralf; Mourick, P.; Netzel, M.

doi:10.1049/ip-cds:20050061

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…High-frequency voltage oscillation is occasionally observed in bipolar power semiconductors during turn-off operations. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The oscillation may not only threaten insulation in the devices but also cause electromagnetic interference (EMI) for external electronic devices. Siemieniec et al investigated the turn-off oscillations in diodes.…”

Section: Introductionmentioning

confidence: 99%

Simulation Study on Insulated Gate Bipolar Transistor Turn-Off Oscillations

Fujita¹

2012

Jpn. J. Appl. Phys.

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High-frequency voltage oscillation is occasionally observed in insulated gate bipolar transistors during a turn-off operation. The turn-off oscillation generation was explained by the plasma extraction transit time oscillation theory. Its basic mechanism was the negative resistance creation. A negative RF power, which meant that the insulated gate bipolar transistor showed a “negative resistance”, was generated by the trapezoidal current density induced by holes and the RF voltage applied to the insulated gate bipolar transistor. However, the author showed that the induced current density oscillates with an almost negative phase compared with the RF voltage oscillation. He carried out an insulated gate bipolar transistor turn-off oscillation simulation using simplified simulation models. In this work, he showed the generation of the negative resistance and the turn-off oscillation in detail. He also showed the common and different points between his results and the plasma extraction transit time oscillation theory.

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