Axial channeling of boron ions into silicon

Ferla, A. La; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carbera, A.; Gasparotto, A.

doi:10.1016/0168-583x(92)95994-3

Cited by 25 publications

References 23 publications

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Impact Parameter Dependence of the Electronic Stopping Power for Channeled Ions

Nakagawa

1993

Physica Status Solidi (b)

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I n order to examine the dependence of the electronic stopping power (dE/ds) on the impact parameter p, the energy dissipation of axially channeled ions with curved trajectories is studied theoretically by means of a cluster model. dE/d.x is accounted in the framework of nonlinear molecular dynamics (MD) coupled with the local density approach (LDA) based on the Ihdhard-Winther (LW) theory. A correction factor of 2 is introduced to compensate the lower dE/dx, especially for low-energy ions. B ions are implanted into Si (100) and ( I lo) at incident energy in the region 10 keV 5 E , 5 10 MeV.Results are the following. Firstly two kinds of solid-state effects on the p-dependence of dE/ds are found at high and low En, respectively. A t high E , ( > 100 keV) the core electrons reveal quite different profiles of dE/ds versus p than valence ones, and at low E , ( < 100 keV) the topological difference in the electron distribution among axial channels appears i n those profiles, which cannot be explaincd by nicans of collisions with single atom. Sccondly, the p-dependence of dE/dx is intended to adapt the simple form ciE(p)/d.x = A exp (-.sp/o). The factor s due to core electrons increases distinctly with En, while that due to valence electrons is almost invariant. smaller than 0.3.

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Impact Parameter Dependence of the Electronic Stopping Power for Channeled Ions

Nakagawa

1993

Physica Status Solidi (b)

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Theoretical ion implantation profiles for low energy protons under channeling conditions

Nobel

Sabin

Trickey

1994

Int. J. Quantum Chem.

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We present early results from the CHANNEL code, which simulates the passage of ionized projectiles through bulk solids. CHANNEL solves the classical equations of motion for the projectile using a force obtained from the gradient of the quantum mechanically derived coulombic potential of the solid [determined via a full potential augmented plane wave (FLAPW) calculation on the bulk] and a quantum mechanical energy dissipation term, the stopping power, as determined from the method of Echenique, Nieminen, and Ritchie. The code then generates the trajectory of the ionic projectile for a given incident position on the unit cell face and an initial velocity. We use CHANNEL to generate an ion (proton) implantation profile for the test case of simple cubic hydrogen with the projectile's initial velocity parallel to the (100) channel. Further preliminary results for ion implantation profiles of protons in diamond structured Si, with initial velocity along the (100) and (1 lo) channels, are given. 0

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Rimini¹

1995

Ion Implantation: Basics to Device Fabrication

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Axial channeling of boron ions into silicon

Cited by 25 publications

References 23 publications

Impact Parameter Dependence of the Electronic Stopping Power for Channeled Ions

Impact Parameter Dependence of the Electronic Stopping Power for Channeled Ions

Theoretical ion implantation profiles for low energy protons under channeling conditions

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