Further improvement of optoelectronic
performance is a target for all-inorganic lead halide perovskite material
CsPbBr3; however, it is greatly limited by the quality
of the material which is dominated to some extent by defects, especially
intrinsic point defects. In this study, the intrinsic point defects
in melt-grown CsPbBr3 crystals were studied by thermally
stimulated current technology and the simultaneous multiple peak analysis
(SIMPA) method. The defect formation mechanism was analyzed systematically
by combining the SIMPA fitting results with defect-related parameters,
material properties, and external conditions. The main analytical
defects, VCs and VBr vacancies, Csi and Pbi interstitials, and PbBr antisites,
matched up with theoretical prediction well. Such systematic studies
of defect types and concentration give us more insights into the carrier
transport mechanism of CsPbBr3 and will help us find ways
to improve the crystal quality by controlling the types and concentration
of point defects.