2014
DOI: 10.1016/j.tsf.2014.02.042
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AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

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Cited by 47 publications
(20 citation statements)
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“…The TRPL of ZnO:Sn hillock structures was measure to characterize the carrier dynamics process. 10,12,35,36 Then TRPL of RS1 and RS2 were measured to compare with that of the ZnO:Sn hillock. The inset of Figure 6 shows the TRPL mapping image of the ZnO:Sn for the exciton emission band.…”
Section: Resultsmentioning
confidence: 99%
“…The TRPL of ZnO:Sn hillock structures was measure to characterize the carrier dynamics process. 10,12,35,36 Then TRPL of RS1 and RS2 were measured to compare with that of the ZnO:Sn hillock. The inset of Figure 6 shows the TRPL mapping image of the ZnO:Sn for the exciton emission band.…”
Section: Resultsmentioning
confidence: 99%
“…28 Thus, a-IGZO was reported to be used as an efficient ETL in organic devices. [31][32][33][34][35][36][37][38][39][40][41] It was observed that AZO/Ag/AZO (30 nm/15 nm/30 nm) films on glass substrates showed an average visible transmittance of 85.4%, a sheet resistance of 3.2 Ω/sq, and an infrared reflection rate of 97%. 29 Kim et al 30 31 and so AZO/Ag/AZO multilayer films have been widely investigated.…”
Section: Introductionmentioning
confidence: 99%
“…Different structures have been proposed in the literature for improving the electrical performance of the front electrode, such as oxide/metal/oxide stacks [9][10][11][12][13], novel metal mesh substrate [14,15], laser-textured ITO films [16] and ITO/AZO bilayer films [17][18][19][20]. The oxide/metal/oxide stacks (e.g., AZO/Ag/AZO) were prepared by inserting a very thin metallic layer between the AZO layers.…”
Section: Introductionmentioning
confidence: 99%
“…The oxide/metal/oxide stacks (e.g., AZO/Ag/AZO) were prepared by inserting a very thin metallic layer between the AZO layers. Although obtaining a low resistivity, the stacks generally suffer from greatly reduced transparency due to the Ag layer and thus result in a low current density of the solar cells [10]. With regard to the metal mesh substrate, it is challenging to achieve good ohmic contact between the metal mesh and the absorber, and thus a sufficiently thick TCO layer is still required as the buffer layer [14].…”
Section: Introductionmentioning
confidence: 99%