B-doping and annealing on the properties of B and Ga co-doped ZnO films

Huang, Jian; Hu, Yan; Ma, Yuncheng; Li, Bing; Tang, Ke; Shi, Haozhi; Gou, Saifei; Zou, Tianyu; Wang, Linjun; Lu, Yicheng

doi:10.1016/j.surfcoat.2018.11.053

Cited by 17 publications

(9 citation statements)

References 29 publications

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“…ZnO is an excellent doped substrate due to its natural donor defects (zinc gap (Zni) and oxygen vacancy (Vo)). In addition to the single doping of ZnO materials, ZnO materials can be modified by two or more dopants, such as Sn−Ga co‐doping, [99] Al−B co‐doping, [100] B−Ga co‐doping [101] and Al−F co‐doping [102] etc. ZnO materials doped with metal elements and heteroatoms, and cations replace Zn 2+ or exist in ZnO lattice gap generally.…”

Section: Co‐dopingmentioning

confidence: 99%

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Advances in Doped ZnO Nanostructures for Gas Sensor

Wang

Gong

et al. 2020

The Chemical Record

131

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Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n-type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n-type ZnO-based semiconductor oxide sensing materials.

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Section: Co‐dopingmentioning

confidence: 99%

“…The high carrier concentration and mobility of the materials result in resistivity decrease, which is attributed to resistivity proportional to the reciprocal of the product of carrier and mobility. It can be expressed by the following equation: [101]

true ρ = 1 / normalN normale μ

…”

Section: Co‐dopingmentioning

confidence: 99%

Advances in Doped ZnO Nanostructures for Gas Sensor

Wang

Gong

et al. 2020

The Chemical Record

131

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“…When this growth progresses towards the formation of the same type of crystal faces, they form a free surface. This mode of growth represents a choice of orientation and leads to competitive growth [21][22][23][24][25][26][27][28]. The preferred orientation for ZnO micro-scale rods is (002), along the c-axis.…”

Section: Scanning Electron Microscopy Studymentioning

confidence: 99%

“…The samples also show the feature of decreasing resistivity with increasing temperature, which demonstrates the semiconductor behavior. At relatively high temperatures, the adsorbed oxygen molecules are desorbed from the thin film's surface [20][21][22], so the potential barrier at the grain boundaries is reduced, making it easier for electrons to cross the grain boundaries. It also affects the increase in donor density due to thermal stimulation.…”

Section: 𝑇 =mentioning

confidence: 99%

“…Researchers have intensively studied ZnO thin films and powders, including those doped with Cr, Mn, Fe, Co, Ni, Cu, Al, Ga, Cd, In, B, and N. The purpose of the dopant is to improve the structural, optical, and electrical properties of ZnO, and to adjust the band gap and super-cage-nano heterostructures with less cage mismatch [7,8,[10][11][12][13][14][15][16][17][21][22][23][24][25][26]. Devices based on ZnO nanostructures are alternatives to Group III-V semiconductor compounds such as GaN-, and GaAs-based devices.…”

Section: Introductionmentioning

confidence: 99%

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Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

et al. 2021

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Intrinsic and dandelion-like microflower nano-rod structures of boron-doped ZnO thin films were synthesized with an ecofriendly and cost-effective chemical bath deposition technique from an aqueous solution of zinc nitrate hexahdyrate [Zn(NO3)2.6H2O] as a precursor solution and boric acid as a doping solution. The boron concentrations were 0.1, 0.3, 0.5, 1.0, 3.0, 5.0, and 7.0 by volume. Scanning electron micrographs showed that doping with boron appears to hinder the vertical alignment of crystallites. Additionally, independent hexagonal nano-rod structures were observed to coalesce together to form dandelion-like structures on the film’s surface. The atomic ratio of the elements was determined via the X-ray photoemission spectrum technique. There were no substantial changes in the vibration structure of the film upon doping in terms of the Raman spectra. The optical band gap of ZnO (3.28 eV) decreased with B doping. The band gap of the ZnO:B film varied between 3.18 and 3.22 eV. The activation energy of the ZnO was calculated as 0.051 eV, whereas that of the ZnO:B film containing 1.0% B was calculated as 0.013 eV at low temperatures (273–348 K), versus 0.072 eV and 0.183 eV at high temperatures (348–523 K), respectively. Consequently, it can be interpreted that the 1% B-doped ZnO, which has the lowest activation energy at both low and high temperatures, may find some application areas such as in sensors for gases and in solar cells.

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Influence of ZnO Cap Layer Morphology on the Electrical Properties and Thermal Stability of Al‐Doped ZnO Films

Zhang

Fei

Huang

et al. 2020

Physica Status Solidi (a)

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Herein, ZnO cap layers are prepared by chemical vapor deposition on Al‐doped ZnO (AZO) films and demonstrate a reduction in the electrical resistivity of the films. When prepared at 600 °C, a continuous ZnO cap layer is formed and leads to an increase in a Hall mobility from 22 to 37 cm2 V−1s−1, resulting in a resistivity of 5.1 × 10−4 Ω cm, which is superior to those of nanoparticle and nanorod morphologies formed at lower and higher substrate temperatures, respectively. Furthermore, the continuous ZnO cap layers successfully prevent decreases in the carrier concentration and Hall mobility during annealing at the temperatures of up to 600 °C in air, resulting in a figure of merit (FOM) of 1.6 × 10−2 Ω−1, which is approximately one order of magnitude better than those of uncapped films annealed in Ar. The improvement is due to the cap layer having proper morphology to provide sufficient protection for restructuring of the AZO grain boundaries, thereby reducing the defect density and sacrificing its structural order to suppress Zn desorption in AZO and environmental oxygen migration into AZO during annealing. Using ZnO as a cap layer also reduces the possibility of introducing unexpected band offset at the interface due to extrinsic elements.

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B-doping and annealing on the properties of B and Ga co-doped ZnO films

Cited by 17 publications

References 29 publications

Advances in Doped ZnO Nanostructures for Gas Sensor

Advances in Doped ZnO Nanostructures for Gas Sensor

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

Influence of ZnO Cap Layer Morphology on the Electrical Properties and Thermal Stability of Al‐Doped ZnO Films

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