BiCMOS Devices and RF Integrated Circuits

Abstract

In this article, BiCMOS technology development focusing on the most recent achievements of SiGe BiCMOS technology is reviewed first. Several important figures of merit of SiGe device for RFIC designers such as f T , f max , BV CEO (collector–emitter breakdown voltage with an open base), and NF min are studied in detail. We begin with the stringent system requirements of typical modern wireless communication standards. Commercial available technology options for RFIC are compared according to performance, power consumption, level of integration, and cost with special emphasis on GaAs, RF CMOS, and SiGe BiCMOS. Passive devices are also explored with respect to their impacts on RFIC design. The design of key wireless system building blocks is investigated. Recently reported results of SiGe BiCMOS low‐noise amplifiers (LNAs), power amplifiers (PAs) and integrated voltage‐controlled oscillators (VCOs) are reviewed. Finally, future trends of RF integrated system adopting SiGe BiCMOS technology are discussed.