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Sato, Setsuro; Tateno, K; Kobayashi, Ryōji

doi:10.3719/weed.46.41

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“…1a, because of the polycrystalline structure of the Ti foil used. However, their crystallinity can be improved by inserting appropriate intermediate layers between the GaN thin film and the Ti foil [6]. Amorphous SiO 2 intermediate layers were especially effective for the purpose, and the improved GaN thin films showed highly c-axis orientation tendencies as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Growth of InGaN Thin Films on Polycrystalline Metal‐Foil Substrates and Their Photoluminescence Properties

Sato

Hishinuma

Sato

2002

phys. stat. sol. (c)

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PACS : 68.55.Ac; 78.66.Fd Polycrystalline metal foils are candidates as large area, flexible, lightweight and inexpensive substrates for nitride thin-film growth. Attempts have been made to grow InGaN thin films, in addition to GaN thin films, on such polycrystalline high-melting-point metal foils, and the photoluminescence properties of the prepared films are investigated. The band edge emission is observed for the prepared InGaN thin film although the film is grown on a polycrystalline Ti metal foil, and the emission intensity is enhanced compared to that of a GaN thin film grown on the same substrate. The UV emission becomes much stronger when the InGaN thin film is grown after deposition of an amorphous SiO 2 intermediate layer on the Ti foil substrate.Introduction Several kinds of highly efficient discrete devices such as light-emitting diodes (LEDs) and laser diodes (LDs) using GaN thin films have been developed. Generally in fabrications of GaN discrete devices, single-crystal substrates are used to grow single-crystal GaN thin films. However, single-crystal substrates such as sapphire are expensive and their substrate areas are limited to a small size. However, polycrystalline metal foils can be used as large area, flexible, lightweight and inexpensive substrates for application of GaN thin films to emissive giant microelectronic devices [1], if the required electrical and optical properties can be obtained when GaN thin films are grown on these substrates. Since adequate growth temperatures of GaN thin films are quite high, plastic substrates cannot be used for the growth. This problem can be easily solved by the adhesion of metal foils onto the plastic substrates after the growth of GaN thin films. Nakamura et al.[2] reported that the deep-level emission of GaN was very strong while the band edge emission was weak in photoluminescence spectra of GaN epitaxial films grown on sapphire substrates by the two-flow metal organic chemical vapor deposition method, although the crystal quality of the GaN epitaxial film was quite high. Conversely, the band edge emission became intense when InGaN epitaxial films were grown by the same growth system, and the deep-level emission became weak [3]. There have been many reports on such superior luminescence properties in InGaN thin films. InGaN alloys show intense luminescence due to the exiton localization because of the large compositional fluctuations [4,5]. It is not certain that the enhancement mechanism can be applied to polycrystalline systems; we attempted to grow InGaN thin films on polycrystalline metal foil substrates and the photoluminescence properties of the prepared films were investigated.

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Section: Resultsmentioning

confidence: 99%