2022
DOI: 10.1039/d2qi01387h
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Ba2HgTe5: a Hg-based telluride with giant birefringence induced by linear [HgTe2] units

Abstract: In this work, Ba2HgTe5, as the first compound identified in the Ba/Hg/Te system, has been successfully synthesized by solid-state reaction. It crystallizes in the orthorhombic space group pnma and exhibits...

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Cited by 8 publications
(5 citation statements)
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“…The UV cutoff edge is ∼282 nm, corresponding to a band gap of 3.5 eV (Figure S6). It is comparable with the previously reported sulfate−selenite mercury of Hg 2 (SeO 3 )(SO 4 ) (3.58 eV), 47 which far exceeds the previously reported Hg-based chalcogenide compounds 48 such as Ba 2 HgTe 5 (1.28 eV), 49 AgHgPS 4 (2.63 eV), 50 (Na 3 Rb)Hg 2 Ge 2 S 8 (2.76 eV), 51 KHg 4 Ga 3 S 9 (3.0 eV), 52 BaHgGeS 4 (3.04 eV), 53 and Zn 2 HgP 2 S 8 (3.37 eV). 54 Compared to the bandgap of 2.63 eV for (Hg 3 Se 2 )(Se 2 O 5 ), the band gap of Hg 3 Se(SeO 3 )(SO 4 ) is significantly improved, due to the effect of SO 4 .…”
supporting
confidence: 88%
“…The UV cutoff edge is ∼282 nm, corresponding to a band gap of 3.5 eV (Figure S6). It is comparable with the previously reported sulfate−selenite mercury of Hg 2 (SeO 3 )(SO 4 ) (3.58 eV), 47 which far exceeds the previously reported Hg-based chalcogenide compounds 48 such as Ba 2 HgTe 5 (1.28 eV), 49 AgHgPS 4 (2.63 eV), 50 (Na 3 Rb)Hg 2 Ge 2 S 8 (2.76 eV), 51 KHg 4 Ga 3 S 9 (3.0 eV), 52 BaHgGeS 4 (3.04 eV), 53 and Zn 2 HgP 2 S 8 (3.37 eV). 54 Compared to the bandgap of 2.63 eV for (Hg 3 Se 2 )(Se 2 O 5 ), the band gap of Hg 3 Se(SeO 3 )(SO 4 ) is significantly improved, due to the effect of SO 4 .…”
supporting
confidence: 88%
“…(3) d 10 cations (Zn 2+ , Cd 2+ , and Hg 2+ ) are favorable for large birefringence. 25 Several Hgbased chalcogenides are reported as IR NLO candidates, like Na 2 Hg 3 M 2 S 8 (M = Si, Ge, Sn), 26 AEHgGeSe 4 (AE = Ba, Sr), 27 K 2 Ba 7 HgIn 4 S 16 , 28 and Li 2 HgMS 4 (M = Si, Ge, Sn). 29 Combining the above strategies together, we put emphasis on the investigation of the A−M II −M III −Q (A = alkali metal; M II = d 10 metal; M III = Ga, In; Q = S, Se) system 30−39 and finally gained new KHg 4 Ga 3 S 9 .…”
mentioning
confidence: 99%
“…(2) Hg features large polarizability, making for large SHG intensities. (3) d 10 cations (Zn 2+ , Cd 2+ , and Hg 2+ ) are favorable for large birefringence . Several Hg-based chalcogenides are reported as IR NLO candidates, like Na 2 Hg 3 M 2 S 8 (M = Si, Ge, Sn), AEHgGeSe 4 (AE = Ba, Sr), K 2 Ba 7 HgIn 4 S 16 , and Li 2 HgMS 4 (M = Si, Ge, Sn) …”
mentioning
confidence: 99%
“…It can form diverse coordi-nation configurations including linear, trigonal-planar, or tetrahedral units, which are widely used to construct excellent NLO and birefringent materials, such as HgBr 2 , β-HgBrCl, LiHgPO 4 , Ag 2 HgI 4 , Ba 2 HgTe 5 and trigonal HgS. [50][51][52][53][54][55][56][57] As mentioned, CsHgNO 3 Cl 2 is a good birefringent crystal. 50 However, Hg-based nitrates with halogen anions are very rare: only CsHgNO 3 Cl 2 , HgINO 3 and Ag 2 HgI 2 (NO 3 ) 2 •H 2 O have been reported.…”
Section: Introductionmentioning
confidence: 99%