Back-Channel-Etched InGaZnO Thin-Film Transistors with Au Nanoparticles on the Back Channel Surface

Xiao, Peng; Wang, Wenfeng; Ye, Yingyi; Dong, Ting; Yuan, Shengjin; Deng, Jiaxing; Zhang, Li; Chen, Jianwen; Yuan, Jian

doi:10.1007/s13391-019-00189-w

Cited by 9 publications

(4 citation statements)

References 36 publications

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“…The ∆V TH for unpassivated ZnO TFT under PBS and NBS are 0.3 and 0.25 V, respectively, whereas the Y 2 O 3 passivated ZnO TFT shows the ∆V TH values of 0.03 and 0.05 V, respectively. The positive shift of the transfer curve is understood by the trapping of electrons at the ZnO/Al 2 O 3 interface [ 30 , 31 ]. Small ∆V TH indicates fewer defects at the interface of the GI and the active layer.…”

Section: Resultsmentioning

confidence: 99%

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

et al. 2020

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We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 °C, respectively. The YOx passivated ZnO TFT exhibits high device performance of field effect mobility (μFE) of 35.36 cm2/Vs, threshold voltage (VTH) of 0.49 V and subthreshold swing (SS) of 128.4 mV/dec. The ZnO TFT also exhibits excellent device stabilities, such as negligible threshold voltage shift (∆VTH) of 0.15 V under positive bias temperature stress and zero hysteresis voltage (VH) of ~0 V. YOx protects the channel layer from moisture absorption. On the other hand, the unpassivated ZnO TFT with Al2O3 GI showed inferior bias stability with a high SS when compared to the passivated one. It is found by XPS that Y diffuses into the GI interface, which can reduce the interfacial defects and eliminate the hysteresis of the transfer curve. The improvement of the stability is mainly due to the diffusion of Y into ZnO as well as the ZnO/Al2O3 interface.

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Section: Resultsmentioning

confidence: 99%

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

et al. 2020

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“…Among them, SnO 2 is a promising candidate due to several advantages. Primarily, SnO 2 has high mobility and a large optical band gap, similar to that of In-based oxide semiconductors. − However, compared with conventional Si-based transistors, metal-oxide-based transistors exhibit high instability to continuous operation bias stress. − This originates from the trap sites at the interfaces between the semiconductor and insulator or the surface trap sites originating from the adsorbed H 2 O or O 2 molecules from the atmosphere. − Therefore, the fabrication of high-performance thin-film transistors (TFTs) with high stability remains a challenge.…”

Section: Introductionmentioning

confidence: 99%

Improved Negative Bias Stability of Sol–Gel-Processed SnO₂ Thin-Film Transistors with Vertically Controlled Carrier Concentrations

Lee

Kim

et al. 2023

ACS Appl. Electron. Mater.

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This study investigates the performance of SnO2 thin-film transistors (TFTs) fabricated with vertically controlled carrier concentrations using a sol–gel method. In the proposed fabrication method, thin Al layers are deposited on SnO2 surfaces to control carrier concentrations. The deposited Al layers are converted into Al2O3 islands on the SnO2 surfaces, functioning as Al3+ dopant sources after an additional annealing process. Using this process, an oxygen-vacancy-less surface regime inside SnO2 semiconductors is successfully formed. It is demonstrated that this morphology significantly reduces bias stress instability by inhibiting trap and de-trap events at the surface of the back channel of TFTs. The fabricated SnO2 TFTs with oxygen-vacancy (VO)-less surfaces demonstrate a field-effect mobility of 8.49 cm2/Vs and a threshold voltage shift of only −3.84 V during negative bias tests. However, compared to other existing bias stress stable metal-oxide semiconductors, the proposed SnO2 TFTs exhibit only a 3.2% loss in field-effect mobility, alongside improved negative bias stability.

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“…Among multiple candidates, we have been examining sol–gel-processed SnO 2 -based TFTs. Similar to In-based oxide semiconductors, which have been intensively developed to date, band-gap SnO 2 semiconductors have high mobilities and large band gaps. ,− However, TFTs based on both oxide semiconductors are degraded by multiple and chronic stability issues with multiple causes, such as trap sites at the semiconductor/insulator interface, oxygen-vacancy trap sites in the bulk, and surface trap sites where H 2 O/O 2 molecules are adsorbed from the atmosphere. − In particular, in comparison to oxide TFTs prepared using conventional vacuum-based deposition methods, solution-processed oxide TFTs showed poor performance, harsh instability, and thermal budget issues. Their poor film density and quality make the active channel layer more exposed to a variety of impurities and degrade their performance.…”

Section: Introductionmentioning

confidence: 99%

Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

Lee

Kim

et al. 2022

ACS Appl. Mater. Interfaces

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This study examines the effect of the annealing time of the Y 2 O 3 passivation layer on the electrical performances and bias stabilities of sol−geldeposited SnO 2 thin-film transistors (TFTs). The environmental stabilities of SnO 2 TFTs were examined. After optimizing the Y 2 O 3 passivation layers in SnO 2 TFTs, the field-effect mobility was 7.59 cm 2 /V•s, the V TH was 9.16 V, the subthreshold swing (SS) was 0.88 V/decade, and the on/off-current ratio was approximately 1 × 10 8 . V TH shifts were only −0.18 and +0.06 V under negative and positive bias stresses, respectively. The SnO 2 channel layer thickness and oxygenvacancy concentration in SnO 2 , which determine the carrier concentration, were successfully tuned by controlling the annealing time of the Y 2 O 3 passivation layers. An extremely thin Y 2 O 3 passivation layer effectively blocked external molecules, thus affecting the device performance. The electrical performance was maximized in SnO 2 TFTs using a 15 min-annealed Y 2 O 3 passivation layer. In this TFT, the field-effect mobility was maximally retained and the bias and environmental stabilities were sustained over 90 days of air exposure.

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Back-Channel-Etched InGaZnO Thin-Film Transistors with Au Nanoparticles on the Back Channel Surface

Cited by 9 publications

References 36 publications

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Improved Negative Bias Stability of Sol–Gel-Processed SnO₂ Thin-Film Transistors with Vertically Controlled Carrier Concentrations

Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

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Back-Channel-Etched InGaZnO Thin-Film Transistors with Au Nanoparticles on the Back Channel Surface

Cited by 9 publications

References 36 publications

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

Improved Negative Bias Stability of Sol–Gel-Processed SnO2 Thin-Film Transistors with Vertically Controlled Carrier Concentrations

Environmentally and Electrically Stable Sol–Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

Contact Info

Product

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Improved Negative Bias Stability of Sol–Gel-Processed SnO₂ Thin-Film Transistors with Vertically Controlled Carrier Concentrations

Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation