Back-contact structures for optoelectronic devices: Applications and perspectives

Yang, Zhenhai; Yan, Jun; Yang, Weichuang; Zeng, Yuheng; Sun, Jingsong; Wang, Xinlong; Yang, Xi; Greer, James C.; Sheng, Jiang; Yan, Baojie; Ye, Jichun

doi:10.1016/j.nanoen.2020.105362

Cited by 9 publications

(7 citation statements)

References 113 publications

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“…12,13 Besides, the photoelectric conversion efficiency of single-junction solar cells is limited by the Shockley-Queisser (SQ) model, 14,15 whose maximum conversion efficiency is about 33%. 3,14 ZnIn 2 S 4 (ZIS) is a kind of direct bandgap semiconductor with a bandgap of 2.34 eV, 16 with enormous potential applications in many fields such as charge storage, 17 thermoelectricity, 18 lithium batteries, 19 photocatalysis, [20][21][22][23][24][25][26][27][28][29] and solar cell. [30][31][32][33] In 2003, Lei et al first reported photocatalytic hydrogen evolution using ZIS.…”

Section: Introductionmentioning

confidence: 99%

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn₂X₄ (X = S, Se, and Te) van der Waals heterostructures

Liang,

Liu,

Gong

et al. 2024

Dalton Trans.

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Section: Introductionmentioning

confidence: 99%

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn₂X₄ (X = S, Se, and Te) van der Waals heterostructures

Liang,

Liu,

Gong

et al. 2024

Dalton Trans.

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“…Furthermore, reports that include both forward and reverse current‐voltage ( J–V ) curves reveal significant hysteresis is typically observed in back‐contact PSC. [ 16,18,19,27 ] In order to further improve the efficiency of back‐contact PSC it is necessary to develop a better understanding of the recombination processes that impede the FF and V OC and the impact of the slow transients that affect the electronic properties.…”

Section: Introductionmentioning

confidence: 99%

“…[16,17] While short-circuit current densities (J SC ) have exceeded 20 mA cm −2 for poly-crystalline PSC, the reported fill factors (FF) ≤ 0.56 and open-circuit voltage (V OC ) ≤ 1.06 V have been underwhelming. [17][18][19][20][21][22][23][24][25][26][27] Low FF is typically attributed to poor carrier transport and excessive recombination in the absorber layer and/or across the perovskite/transport layer interfaces. [28] Recently, our group has demonstrated that the incorporation of a mesoporous TiO 2 layer, which increases the interfacial contact area, improves charge extraction resulting in significant increases in the J SC and FF of 36 and 25%, respectively.…”

mentioning

confidence: 99%

Ideality Factor Mapping of Back‐Contact Perovskite Solar Cells

Rietwyk

Lin

Tan

et al. 2023

Advanced Energy Materials

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They enjoy high optical absorption, nearideal band gaps, high carrier mobilities, and long carrier diffusion lengths. [1][2][3][4][5][6] Meanwhile, this class of materials consists of Earth-abundant elements and is solution-processable, making it a low-cost material. [7,8] At present, sandwich structure perovskite solar cells (PSC) have demonstrated power conversion efficiencies (PCE) as high as 25.7%, only 0.4% behind monocrystalline silicon. [9] However, there has been growing interest in PSC with a back-contact architecture due to various advantages in the design compared to sandwich PSC. A key improvement is the enhanced light harvesting, due to the elimination of the front contact and its parasitic light absorption. This offers the opportunity to employ an anti-reflective coating and a front-textured perovskite layer. [6] Drift-diffusions simulations reveal an improvement in photocurrents by ≈20% [10] and with further optimization, the PCE of back-contact PSC is expected to exceed their sandwich structure counterparts. [11,12] This has already been demonstrated in the case of silicon-based devices, with champion silicon back-contact solar cells enjoying a PCE of 26.6%. [13] There has also been growing interest in PSC with a back-contact architecture as a component in tandem cells in order to exceed the Shockley-Queisser (SQ) limit of a single junction. [14,15] To date, the stabilized PCE for back-contact PSC has reached 11.5 and 9.1% for single and poly-crystalline perovskite-based devices, respectively. [16,17] While short-circuit current densities (J SC ) have exceeded 20 mA cm −2 for poly-crystalline PSC, the reported fill factors (FF) ≤ 0.56 and open-circuit voltage (V OC ) ≤ 1.06 V have been underwhelming. [17][18][19][20][21][22][23][24][25][26][27] Low FF is typically attributed to poor carrier transport and excessive recombination in the absorber layer and/or across the perovskite/transport layer interfaces. [28] Recently, our group has demonstrated that the incorporation of a mesoporous TiO 2 layer, which increases the interfacial contact area, improves charge extraction resulting in significant increases in the J SC and FF of 36 and 25%, respectively. [17] The low V OC indicates high non-radiative recombination rates. Recently, Tainter et al. [27] reported on back-contact cells that enjoy long diffusion lengths (≥12 µm), slow surface recombination velocities ≈2 cm s −1 with short circuit currents of 18.4 mA cm −2 (external quantum efficiency (EQE) of 70%) but a meager V OC = 0.57 V. They propose the limiting factor in their devices to be high dark saturation currents, a parameter that The efficiency of back-contact perovskite solar cells has steadily increased over the past few years and now exceeds 11%, with interest in these devices shifting from proof-of-concept to viable technology. In order to make further improvements in the efficiency of these devices it is necessary to understand the cause of the low fill factor, low open-circuit voltage (V OC ), and severe hysteresis. Here a time-dependent...

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“…[ 24–26 ] In addition, the built‐in electric field formed by the heterostructure contributes to the photovoltaic effect. [ 27–29 ] As a result, devices not only mimic the characteristics of biological synapses in voltage mode and offer dynamic multi‐level memory, but also generate excitatory post‐synaptic current (EPSC) and neuroplasticity [ 30–35 ] with no external bias voltage. However, although self‐driven neural computation processes may further lower power consumption, few reports have discussed the operation of In 2 Se 3 ‐based lateral heterojunctions in self‐powered mode.…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered Optoelectronic Synaptic Devices Based on In₂Se₃/MoS₂ Ferroelectric Heterojunction with Boosted Performance

Feng,

He,

Zeng

et al. 2023

Adv Materials Technologies

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Neuromorphic computing systems are based on new architecture inspired by biological learning behavior and biological structure to overcome the shortcomings of the von Neumann system, such as high energy consumption and generation of excessive redundant data. However, common synaptic‐device designs are still need to carry an external power source, which is detrimental to both the miniaturization of smart devices and the further reduction of energy consumption. Therefore, self‐powered optoelectronic synapses hold great promise for achieving energy‐efficient artificial intelligence applications. Given the advantages of heterogeneous integration and ferroelectric performance, the 2D ferroelectric In2Se3 has become a typical candidate material for biological synaptic devices and neuromorphic computing. Although, various structures of ferroelectric synaptic devices are developed, most of which are controlled by optical or electrical pulses, hardly any reports discuss the operation in self‐powered mode. In this work, an In2Se3/MoS2 ferroelectric lateral heterojunction‐type optoelectronic synaptic device is fabricated to mimic biological synaptic functions in voltage mode or self‐driven mode. In addition, two simplified image pre‐processing methods based on device arrays are shown to improve the recognition accuracy of a back‐end neural network. The proposed approach suggests a new route for designing and applying high‐performance synaptic devices.

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Back-contact structures for optoelectronic devices: Applications and perspectives

Cited by 9 publications

References 113 publications

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn₂X₄ (X = S, Se, and Te) van der Waals heterostructures

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn₂X₄ (X = S, Se, and Te) van der Waals heterostructures

Ideality Factor Mapping of Back‐Contact Perovskite Solar Cells

Self‐Powered Optoelectronic Synaptic Devices Based on In₂Se₃/MoS₂ Ferroelectric Heterojunction with Boosted Performance

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Back-contact structures for optoelectronic devices: Applications and perspectives

Cited by 9 publications

References 113 publications

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn2X4 (X = S, Se, and Te) van der Waals heterostructures

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn2X4 (X = S, Se, and Te) van der Waals heterostructures

Ideality Factor Mapping of Back‐Contact Perovskite Solar Cells

Self‐Powered Optoelectronic Synaptic Devices Based on In2Se3/MoS2 Ferroelectric Heterojunction with Boosted Performance

Contact Info

Product

Resources

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Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn₂X₄ (X = S, Se, and Te) van der Waals heterostructures

Ultra-high photoelectric conversion efficiency and obvious carrier separation in photovoltaic ZnIn₂X₄ (X = S, Se, and Te) van der Waals heterostructures

Self‐Powered Optoelectronic Synaptic Devices Based on In₂Se₃/MoS₂ Ferroelectric Heterojunction with Boosted Performance