Back diffusion of iron impurity during silicon purification by vacuum directional solidification

Wen, Shutao; Jiang, Dachuan; Li, Pengting; Tan, Yi

doi:10.1016/j.vacuum.2015.06.005

Cited by 7 publications

(1 citation statement)

References 17 publications

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“…During upward directional solidification, most of the impurities with a lower segregation coefficient accumulate near the top of the ingot. Unfortunately, the low crystal growth rate usually causes visible back-diffusion in the solid phase, which reduces the purification effect [19]. In addition, low efficiency, i.e., slow growth rate, is a major problem.…”

Section: Introductionmentioning

confidence: 99%

A Facile and Low-Cost Method to Produce Ultrapure 99.99999% Gallium

Pan

Zhang

et al. 2018

Materials

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As one of the critical raw materials, very pure gallium is important for the semiconductor and photoelectric industry. Unfortunately, refining gallium to obtain a purity that exceeds 99.99999% is very difficult. In this paper, a new, facile and efficient continuous partial recrystallization method to prepare gallium of high purity is investigated. Impurity concentrations, segregation coefficients, and the purification effect were measured. The results indicated that the contaminating elements accumulated in the liquid phase along the crystal direction. The order of the removal ratio was Cu > Mg > Pb > Cr > Zn > Fe. This corresponded to the order of the experimentally obtained segregation coefficients for each impurity: Cu < Mg < Pb < Cr < Zn < Fe. The segregation coefficient of the impurities depended strongly on the crystallization rate. All observed impurity concentrations were substantially reduced, and the purity of the gallium obtained after our refinement exceeded 99.99999%.

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Section: Introductionmentioning

confidence: 99%