Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity

Liu, Yin-Chi; Li, Yuchun; Gu, Ze-Yu; Zhou, Xiaoying; Huang, Teng; Li, Z. H.; Pi, Tiantian; Li, Yanfei; Chen, Lin; Lu, Hong‐Liang; Liu, Wen-Jun

doi:10.1109/led.2023.3278291

Cited by 9 publications

(2 citation statements)

References 24 publications

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“…When a voltage lower than the coercive voltage ( V c ) of the ferroelectric stack is applied to the electrodes, the current associated with polarization can be nondestructively measured. In order to obtain a reasonable current difference between the ON and OFF states and achieve a high TER, defined as TER = ( I LRS – I HRS )/ I HRS where I LRS and I HRS are the current level as the low-resistance state and high-resistance state, respectively, the FTJ devices must be formed by asymmetric stack layers, in which the TER effect refers to the reversible change in tunneling conductivity through a thin ferroelectric barrier layer induced by the polarization switching of the ferroelectric material. − It has been established that the TER effect correlates with variations in the effective potential barrier, attributed to asymmetric charge screening length at the barrier/electrode interface and the ferroelectric polarization induced built-in polarization field. − It can be seen that researchers commonly introduce interfacial layers, such as TiO 2 , , HfO 2 , , Al 2 O 3 , , and ZrO 2 , between the electrodes and the Zr:HfO 2 ferroelectric layer for studying the FTJ performance. For instance, Max et al proposed a bilayer FTJ structure consisting of hafnium zirconium oxide (HZO) as the ferroelectric layer and aluminum oxide (Al 2 O 3 ) as the tunneling barrier.…”

Section: Introductionmentioning

confidence: 99%

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Xu,

Wang,

Liu

et al. 2024

ACS Appl. Electron. Mater.

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In this article, the effect of the ZrO2 intercalation layer on the ferroelectric properties and the tunneling electroresistance (TER) effect of Hafnium–Lanthanum oxide (La:HfO2)-based ferroelectric tunnel junction (FTJ) devices were systematically investigated for the first time. Compared with the initial La:HfO2 device, an improved value of remnant polarization (2P r) ∼16.3 μC/cm2@4 V by intercalating the ZrO2 interlayer can be observed. The underline mechanism for the enhanced ferroelectric properties of La:HfO2 thin films with the ZrO2 intercalation layer was supported by the first-principal calculations. Furthermore, the FTJ performance was evaluated. The TER ratio of La:HfO2-based FTJs showed an increase from 1.5 to 15.1@6 V, 1000 ns@by ZrO2 interlayer incorporating. Finally, the mechanism behind the enhancement of ferroelectric polarization characteristics and the FTJ performance of La:HfO2 by introducing ZrO2 interlayers were unveil. These findings provide valuable guidance for optimizing the ferroelectric properties and FTJ performance of HfO2-based thin films and promoting future memory applications.

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Section: Introductionmentioning

confidence: 99%

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Xu,

Wang,

Liu

et al. 2024

ACS Appl. Electron. Mater.

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“…Ruben et al presented that the low reactivity of electrode with Hf 0.5 Zr 0.5 O 2 is vital to improve the reliability of ferroelectric capacitor [12]. In addition, the introduction of a ZrO 2 seed layer has been shown as a feasible method to improve both ferroelectricity and reliability in Hf 0.5 Zr 0.5 O 2 -based MFM devices [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Enhanced polarization and endurance properties of ZrO₂-based ferroelectric capacitor using HfO₂ interfacial layer

Zhang,

Shi,

Zhang

et al. 2024

Nanotechnology

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Recently discovered ferroelectricity in fluorite-structure ZrO2 thin film has attracted increasing and intense interest due to its lower crystallization temperature and higher content in nature in comparison to hafnium oxide. Here, the effect of HfO2 interfacial layer on the ferroelectric properties of ZrO2 thin films is investigated systematically by designing four types of interfacial structures. It is revealed that the ferroelectric orthorhombic phase, remanent polarization, and endurance can be improved in ZrO2 thin film by inserting both a top- and bottom-HfO2 interfacial layer. A maximal ferroelectric remanent polarization (2Pr) of 53.4 μC/cm2 and an optimal endurance performance of 3×107 field cycles under frequency of 100 kHz are achieved in Pt/HfO2/ZrO2/HfO2/Pt capacitors, with ferroelectric stacks being crystallized at 450 ℃ via post-deposition annealing method. X-ray photoelectron spectroscopy analysis confirms that the HfO2 bottom-layer plays a very important role in the formation of a higher ratio o-phase, thus enhancing the ferroelectricity. These results suggest that designing appropriate interfaces would help achieve excellent ferroelectric properties in ZrO2 films.

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High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

Roy,

Islam,

Ali

et al. 2024

Physica Status Solidi (a)

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Ferroelectric (FE) hafnium zirconium oxide (HZO) thin‐film transistors (TFTs) are of increasing interest for next‐generation memory and computing applications. However, these devices face challenges in achieving a substantial memory window (MW). This report presents amorphous InGaZnO (a‐IGZO) ferroelectric–dielectric (FD), dual‐gate thin‐film transistors (DG‐TFTs) with FE‐HZO as a bottom gate insulator (GI) and SiO2 as a top GI. The ferroelectricity in HZO is confirmed through the grazing incidence X‐ray diffraction (GI‐XRD), capacitance, and polarization measurements. The FD‐DG TFT can increase the MW by tuning the threshold voltage (VTH) due to electrostatic coupling between the top gate (TG) and bottom gate (BG). The increase of MW at the TG driving is related to the coupling factor which is equal to the ratio of the equivalent capacitance of top to bottom gated transistors. During the bottom sweep, the FD‐DG‐TFT demonstrates an anticlockwise hysteresis with a MW of 4.98 V, a high ION/IOFF ratio of ≈106, and a steep subthreshold swing (SS) of 90 mV dec−1. On the contrary, MW of 12 V and SS of 140 mV dec−1 are observed for the top sweep operation. A thinner ferroelectric GI at BG TFT induces sufficient electrostatic coupling to cause a large VTH shift at TG driving, resulting in a boosted MW.

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Back-End of Line Compatible Hf_0.5Zr_0.5O₂ With ZrO₂ Seed Layer for Enhanced Ferroelectricity

Cited by 9 publications

References 24 publications

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Enhanced polarization and endurance properties of ZrO₂-based ferroelectric capacitor using HfO₂ interfacial layer

High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

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Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity

Cited by 9 publications

References 24 publications

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2 interfacial layer

High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

Contact Info

Product

Resources

About

Back-End of Line Compatible Hf_0.5Zr_0.5O₂ With ZrO₂ Seed Layer for Enhanced Ferroelectricity

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Enhanced polarization and endurance properties of ZrO₂-based ferroelectric capacitor using HfO₂ interfacial layer