Backgating effects in GaAs FETs with a channel-semi-insulating substrate boundary

Sengouga, Nouredine; Jones, Brian K.

doi:10.1016/0038-1101(94)00249-f

Solid-State Electronics

1995

DOI: 10.1016/0038-1101(94)00249-f

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Backgating effects in GaAs FETs with a channel-semi-insulating substrate boundary

Nouredine Sengouga¹,

Brian K. Jones²

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Cited by 12 publications

References 16 publications

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Current Induced Potential Well in Compensated Semiconductors

Manifacier¹,

Ardebili²

1996

Phys. Stat. Sol. (a)

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To obtain high resistivity samples in the case of ID-V compounds such as GaAs or InP, deep levels are often used as compensating centers for residual shallow dopants. These levels usually have very different capture cross sections for electrons (a,) and holes (ap). We consider here a GaAs P+semi-insulating (S1)-NC structure whose SI central zone consists of two layers of equal thickness.One layer is made with an electron trap as the compensating level (a, >> a,; r,.t << rp,t). the other layer is made with a hole trap as the compensating level (ap >> a,; rp,t << r,.t). Numerical simulations under forward bias show that electron and hole injection across the contacts induce, at the interface between the two layers, a space charge region as in a P-N junction. The resulting potential barrier can either assist or oppose the current, depending on the nature of the compensated layer (electron trap or hole trap) adjacent to the injecting contact. We also present here numerical results for a three-layer structure. For this structure, a potential well develops across the middle layer under forward bias conditions.

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Current Induced Potential Well in Compensated Semiconductors

Manifacier¹,

Ardebili²

1996

Phys. Stat. Sol. (a)

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The measurement and analysis of noise in GaAsFETs

Abdala

Iqbal

Jones

1996

Solid-State Electronics

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Effect of backgating on the field distribution in planar thin-film GaAs structures

Gorev

Kodzhespirova

Kovalenko

et al. 2001

Microelectronics Journal

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Backgating effects in GaAs FETs with a channel-semi-insulating substrate boundary

Cited by 12 publications

References 16 publications

Current Induced Potential Well in Compensated Semiconductors

Current Induced Potential Well in Compensated Semiconductors

The measurement and analysis of noise in GaAsFETs

Effect of backgating on the field distribution in planar thin-film GaAs structures

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