Background correction of the SAXS intensities scattered by semicrystalline materials

Abstract

A new method of background correction of small-angle X-ray scattering (SAXS) intensities scattered by semicrystalline materials is proposed. The intensities scattered by the sample when in the amorphous state were taken as the background scattering. This method was applied to background correction of the SAXS intensities scattered by aged nylon 1010 and the width of the transition layer between crystalline and amorphous phase was determined to be 2.0 nm.