Backside-illuminated InAsSb/GaSb broadband detectors

Abstract

This letter reports the achievement of a high-performance, broad-spectral-band infrared detector with the InAs1−xSbx alloy system using a backside-illuminated heterostructure approach. The basic structure of the detector is obtained with InAs1−xSbx grown by a liquid phase epitaxy technique on a GaSb substrate under lattice-matched or nearly lattice-matched conditions. The measured photoresponse covers the spectral range 1.7–4.2 μm with an external quantum efficiency of 65% without antireflective coating. The typical zero-bias resistance area product is in excess of 109 Ω cm2. The typical leakage current desity is less than 10−9 A/cm2 for 100 mV reverse bias. All parameters were measured at 77 K.

Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

“…On InP substrates, approaches include strain compensated In 1-x Ga x As (x , 0.47) quantum well photodiodes which have achieved a cutoff wavelength of 2.15 mm [2] or relaxed In 0.65 Ga 0.35 As grown on InP photodetectors which have an operation wavelength 2 mm [3]. On GaSb substrates, bulk InAsSb detectors have photoresponse covering the spectral range 1.7-4.2 mm, but need cryogenic operation owing to high dark current [4].Over the past few years, we have developed InGaAs/GaAsSb type-II quantum wells as an alternative absorption region for the SWIR. In these structures, electrons and holes are confined in adjacent layers, and optical transitions have a smaller effective bandgap, which enables longer wavelength operations [5][6][7].…”

“…On InP substrates, approaches include strain compensated In 1-x Ga x As (x , 0.47) quantum well photodiodes which have achieved a cutoff wavelength of 2.15 mm [2] or relaxed In 0.65 Ga 0.35 As grown on InP photodetectors which have an operation wavelength 2 mm [3]. On GaSb substrates, bulk InAsSb detectors have photoresponse covering the spectral range 1.7-4.2 mm, but need cryogenic operation owing to high dark current [4].…”

InAsSb and InPSb materials for mid infrared photodetectors

“…Large area homojunction InAsSb detectors with outstanding R 0 A values were grown by liquid phase epitaxy on GaSb substrates many years ago [13], however, this technique is not suitable for heterojunction bandgap engineering and small area devices suitable for FPAs. The growth of InAsSb based detectors has been reported recently by several groups using molecular beam epitaxy.…”

Room-temperature operation of InTlSb infrared photodetectors on GaAs

“…Photodetectors based on InAsSb alloys with the lowest band gap in III-V materials have been demonstrated. [1][2][3] Recently, we have reported InAsSb photodetectors with a cutoff wavelength of about 14 m at room temperature. 4 As an alternative to the InAsSb material system, InTlSb was proposed as a potential infrared material at long wavelength.…”