2011 International Reliability Physics Symposium 2011
DOI: 10.1109/irps.2011.5784577
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Backside reflectance modulation of microscale metal interconnects

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“…At electrical bias of 6, 14, 25 and 40 mW, the temperature change of the metal line are 3.4, 10.0, 19.0 and 25.8 K, respectively. A backside reflectance model has been developed to explain the experimental results [7]. The total light intensity I te measured by a telecentric system is:…”
mentioning
confidence: 99%
“…At electrical bias of 6, 14, 25 and 40 mW, the temperature change of the metal line are 3.4, 10.0, 19.0 and 25.8 K, respectively. A backside reflectance model has been developed to explain the experimental results [7]. The total light intensity I te measured by a telecentric system is:…”
mentioning
confidence: 99%