Backside thinning of GaAs wafer by lapping using DOE approach

Prakash, Siddi Jai; Tyagi, Rinki; Gupta, Ashish

doi:10.1109/iicpe.2011.5728072

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ultraprecision multiplex 2D or 3D free-form nanostructures are often required on GaAs devices, such as radio frequency power amplifiers and switches used in 5G smart mobile wireless communications [13][14][15]. Currently, lapping [16,17] and chemical-mechanical polishing [18][19][20][21] have been employed to successfully fabricate planar GaAs wafers. However, they are not competent for the fabrication of 2D or 3D nanostructures.…”

Section: Introductionmentioning

confidence: 99%

A Simulated Investigation of Ductile Response of GaAs in Single-Point Diamond Turning and Experimental Validation

et al. 2020

View full text Add to dashboard Cite

In this paper, molecular dynamic (MD) simulation was adopted to study the ductile response of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting temperature, coordination number, and cutting forces were revealed through MD simulations. SPDT experiment was also carried out to qualitatively validate MD simulation model from the aspects of normal cutting force. The simulation results show that the fundamental reason for ductile response of GaAs during SPDT is phase transition from a perfect zinc blende structure (GaAs-I) to a rock-salt structure (GaAs-II) under high pressure. Finally, a strong anisotropic machinability of GaAs was also found through MD simulations.

show abstract