2001
DOI: 10.1103/physrevb.64.201404
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Backward diode composed of a metallic and semiconducting nanotube

Abstract: The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigated. A tight binding model is used for the analysis, which includes the Hartree-Fock approximation and the Green's function method. It is found that the junction has a behavior similar to the backward diode if the gate electrode is located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the req… Show more

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Cited by 20 publications
(5 citation statements)
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“…Having computed the charge density, it is straightforward to calculate the linear capacitance coefficients, hereafter simply referred to as the capacitance coefficients, using the definition C ␣␤ ϭedQ ␣ /d ␤ ; i.e., by applying a change in voltage ⌬Vϭd/e to a given reservoir and then measuring the charge difference ⌬QϭQ(Vϩ⌬V)ϪQ(V). As a further feature, we have used the Dirichlet boundary conditions for the electrostatic potential at the walls of our finite-sized calculational box, which corresponds to the entire system being surrounded by a metal container, 33 as shown in Fig. 2.…”
Section: ͑7͒mentioning
confidence: 99%
“…Having computed the charge density, it is straightforward to calculate the linear capacitance coefficients, hereafter simply referred to as the capacitance coefficients, using the definition C ␣␤ ϭedQ ␣ /d ␤ ; i.e., by applying a change in voltage ⌬Vϭd/e to a given reservoir and then measuring the charge difference ⌬QϭQ(Vϩ⌬V)ϪQ(V). As a further feature, we have used the Dirichlet boundary conditions for the electrostatic potential at the walls of our finite-sized calculational box, which corresponds to the entire system being surrounded by a metal container, 33 as shown in Fig. 2.…”
Section: ͑7͒mentioning
confidence: 99%
“…Figure 1 illustrates a 'polygonal CNT torus' where pentagonal and heptagonal defects form the corner of the polygonal shape along the outer fringe and the inner fringe, respectively. These defects are generally called disclinations and have significant effect on the CNT junction, [11] the CNT cap [12] and the helical CNT. [13,14] Here we define a 'polygonal' CNT torus as the CNT torus with the disclinations, though it can also have a rounded shape when the disclinations are close to each other.…”
Section: Introductionmentioning
confidence: 99%
“…1 The current-voltage (I-V) characteristics of such atomic and molecular systems hold forth the promise of revolutionary new devices for ultrasensitive probes and detectors, very high-speed and ultralarge density electronic components, and the possibility of novel logic layouts. This field has benefitted considerably from the development of self-organized structures, such as carbon nanotubes, 2 which have acted as an important theoretical [3][4][5] and experimental laboratory for exploring quantum transport at a nanometer length scale. In particular, semiconducting carbon nanotubes 6 show promise as field-effect transistors with better device properties than Si MOSFETs (metaloxide-semiconductor field-effect transistors).…”
mentioning
confidence: 99%