Cesium‐formamidinium (Cs‐FA) perovskites have garnered widespread interest owing to their excellent thermal‐ and photostability in achieving stable formamidinium lead iodide (FAPbI3) perovskite solar cells (PSCs). However, Cs‐FA perovskite typically suffers from Cs+ and FA+ mismatches, affecting the Cs‐FA morphology and lattice distortion, resulting in an enlarged bandgap (Eg). To address these issues, we developed “upgraded” CsCl—Eu3+‐doped CsCl quantum dots (QDs) for FAPbI3 PSCs to solve the key issues in Cs‐FA PSCs and also exploit the advantage of Cs‐FA PSCs on stability. The introduction of Eu3+ promoted the formation of high‐quality Cs‐FA films by adjusting the Pb‐I cluster structure. CsCl:Eu3+ also offsets the local strain and lattice contraction induced by Cs+, which maintains the inherent Eg of FAPbI3 and decreases the trap density. Finally, we obtained a power conversion efficiency (PCE) of 24.13% with an excellent short‐circuit current density (Jsc) of 26.10 mA/cm2, which are among the highest in methylammonium (MA)‐free PSCs. The unencapsulated devices showed excellent humidity and storage stability owing to the relieved lattice strain and ligand protection. We achieved an initial PCE of 92.2% within 500 h under continuous light illumination of 1.5 G and bias voltage conditions, demonstrating excellent operational stability. This study provides a universal strategy to address the inherent issues of Cs‐FA devices and maintain the stability of MA‐free PSCs to satisfy future commercial criteria.This article is protected by copyright. All rights reserved