Ballistic electron transport in wrinkled superlattices

Abstract

Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and periodicity, having different behaviors for positive and negative scattering potential energies. For scattering on potential barriers, minibands appear in electron transmission, as in superlattices, whereas for scattering on periodic potential wells the transmission coefficient has a more complex form. Besides suggesting that tuning of electron transmission is possible by modifying the scattering potential via voltages on wrinkled gate electrodes, our results emphasize the analogies between ballistic electrons and elastic waves even in scattering problems on non-typical configurations

A One-Dimensional Effective Model for Nanotransistors in Landauer–Büttiker Formalism

“…where E ⊥0 s is the smallest transverse mode energy, E ⊥0 s = min n (E ⊥ sn ). One then finds from Equations (30) and 45Ω sn,s n = k 1/2 sn R sn,s n k 1/2 s n = ∑ k c ksn c ks n Ω k ss (47) with…”

“…The application of the R-matrix technique to mesoscopic semiconductor systems was demonstrated by Smrčka [36] for one-dimensional structures. Since then it has been applied to a variety of other semiconductor nano-structures as point contacts [37], quantum dots [38,39], resonant tunneling in double barrier systems [40], four-terminal cross-junctions [41], gate all around and double gate MOSFETs [42,43], nanowire transistors [44], spin FETs [45], magneto-transport in nanowires [46], ballistic transport in wrinkled superlattices [47], and spin controlled logic gates [48]. A conceptual advantage of the R-matrix method is that for the construction of the transmission coefficients only properties of general wave function solutions of the time-independent Schrödinger equation are necessary (see Equation (21)).…”