2015
DOI: 10.1103/physrevb.92.195406
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Ballistic transport in graphene antidot lattices

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Cited by 31 publications
(46 citation statements)
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“…SL engineering in graphene has been pursued extensively utilizing electrostatic gating schemes [13][14][15] as well as direct modification by chemical doping 16 , etching [17][18][19] , and strain engineering 20 . In all of these efforts the primary technical challenge remains the SL length scale.…”
mentioning
confidence: 99%
“…SL engineering in graphene has been pursued extensively utilizing electrostatic gating schemes [13][14][15] as well as direct modification by chemical doping 16 , etching [17][18][19] , and strain engineering 20 . In all of these efforts the primary technical challenge remains the SL length scale.…”
mentioning
confidence: 99%
“…By encapsulating graphene in hexagonal boron nitride (hBN) during the nanopatterning step, Sandner et al [52] demonstrated that the sample quality can be protected, and consequently they observed pronounced commensurability peaks that they associated with orbits around one, two, or four antidots in a square lattice. A contemporaneous study by Yagi et al [53], using a different etching technique, found commensurability features in triangular lattices with smaller mean free paths, suggesting that scattering between nearest-neighbor antidots plays a key role.…”
Section: Introductionmentioning
confidence: 99%
“…A realization is shown in figure 2(b). (Note that this boundary roughness is distinct from the impurity scattering, which we also included in our model, see equation (8). )…”
Section: Modelmentioning
confidence: 99%
“…They were first fabricated by ion-beam implantation [1] or by etching periodic arrays of holes with periods of a few hundred nanometers into the 2DEG of AlGaAs/GaAs heterostructures [2] and by modulation of the 2DEG by nanostructured lateral metal gates [3]. Since then antidots were realized in many different materials [4][5][6], and recently also in graphene [7][8][9] and topological insulators [10]. They are a prime example of devices showing features of ballistic transport: when the typical length scales of a device become smaller than the mean free path of the electrons, transport is no longer dominated by diffusion due to impurity, phonon or electron-electron scattering.…”
mentioning
confidence: 99%