2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)
DOI: 10.1109/commad.2002.1237245
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Ballistic transport in nanostructures used for novel THz emitters

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“…Therefore, the ilayer-lengths are chosen approx. 200nm, leading to transit-time frequency ν tr ≈ 1 THz [19,20]. Thus, the emitted THzpower is not transit-time limited up to 1 THz.…”
mentioning
confidence: 99%
“…Therefore, the ilayer-lengths are chosen approx. 200nm, leading to transit-time frequency ν tr ≈ 1 THz [19,20]. Thus, the emitted THzpower is not transit-time limited up to 1 THz.…”
mentioning
confidence: 99%