Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions

Gong, Haigang; Chen, Xuanhu; Xu, Yang; Chen, Yanting; Ren, Fangfang; Liu, Bin; Gu, Shulin; Zhang, Rong; Ye, Jiandong

doi:10.1109/ted.2020.3001249

Cited by 89 publications

(66 citation statements)

References 32 publications

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“…The transmission spectrum was measured from 200 to 700 nm, and NiO began to exhibit strong absorption below roughly 300 nm. The bandgap of NiO was estimated using the Tauc equation as well, and it was found to be around 3.71 eV (inset of Figure c), which was consistent with previous reports . An atomic force microscopy (AFM) image of the NiO thin film on the device was obatined, as shown in Figure d.…”

Section: Resultssupporting

confidence: 88%

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Chen

et al. 2022

ACS Appl. Electron. Mater.

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Based on a metal-oxide-semiconductor (MOS) structure, a double Schottky barrier junction (SBJ) made of NiO/graphene/4H-SiC is built and employed in ultraviolet (UV) detection. The hole concentration of NiO can be modulated as depleted or accumulated states with gate voltages, which allows the device to work in dual-mode when used as a photodetector. In this work, a negative gate bias causes the device to operate as a photoconductive detector with gain due to the negligible Schottky barrier, whereas a zero or positive gate bias makes it work as a Schottky photodiode. The device has a high responsivity of 103.3 A/W and a gain of 490.8 despite the low light intensity (261 nm laser @ 30.19 μW/cm 2 ) at V DS = 5 V and V GS = −3 V. The NiO layer and SiC substrate both serve as UV absorption materials and produce photogenerated carriers, and the device has a wide UV response range from 240 to 400 nm with a gain of 80.34 when V DS = −3 V and V GS = 0 V at 240 nm. The above findings suggest that this MOS-based NiO/graphene/4H-SiC double SBJ has a great prospect in practical UV detection.

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Section: Resultssupporting

confidence: 88%

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Chen

et al. 2022

ACS Appl. Electron. Mater.

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“…For heterojunction-based optoelectronic devices, the electronic band structure at the interface, i.e. , conduction band offset (Δ E C ), valence band offset (Δ E V ), the built-in potential, and the barrier height (Φ B ), governs the transport characteristics and electron confinement of the heterojunction. , Therefore, the band structure of the a-Ga 2 O 3 /ITO heterojunction needs to be considered. To determine the band alignment, high-resolution X-ray photoelectron spectroscopy (XPS) was measured to check the core level peak positions. , Δ E V is calculated by Kraut’s method where and are the binding energy of the valence band maximum (VBM) and core levels of Ga 2 O 3 sample; the and are the binding energy of the VBM and core levels of ITO sample, and are the core levels of ultrathin Ga 2 O 3 film (3 nm) grown on ITO.…”

Section: Resultsmentioning

confidence: 99%

“…30,43−45 For heterojunction-based optoelectronic devices, the electronic band structure at the interface, i.e., conduction band offset (ΔE C ), valence band offset (ΔE V ), the built-in potential, and the barrier height (Φ B ), governs the transport characteristics and electron confinement of the heterojunction. 46,47 Therefore, the band structure of the a-Ga 2 O 3 /ITO heterojunction needs to be considered. To determine the band alignment, high-resolution X-ray photoelectron spectroscopy (XPS) was measured to check the core level peak positions.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction

Wang

Cao³

et al. 2021

ACS Nano

106

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Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.

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“…To date, the technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack of p-type Ga 2 O 3 seriously limits their further development and even future commercialization. To overcome the technological bottleneck, an alternative strategy to realize bipolar devices is the construction of p-n heterojunction with foreign p-type materials [6][7][8][9]. Recently, we have demonstrated NiO/β-Ga 2 O 3 p-n heterojunction power diodes (HJD) with superior performances that outperform the unipolar counterpart, Schottky barrier diode (SBD) [7,10,11].…”

Section: Introductionmentioning

confidence: 99%

“…Deep-level traps in β-Ga 2 O 3 have been reported as the origin of the reverse leakage pathway of premature breakdown and the dominant source of threshold voltage instability of metal-semiconductor field effect transistors (MESFETs) [10,[12][13][14][15], which leads to the undesirable device performances. In particular, the reported all-oxide heterojunctions with type-II band alignments usually exhibit non-unity ideality factors and the abnormal subthreshold "turn-on" characteristics [6,9,[16][17][18]. Therefore, trap-mediated transport dynamics in the p-n heterojunction are crucial for the comprehensive evaluation of β-Ga 2 O 3 bipolar power devices, which is not fully explored yet.…”

Section: Introductionmentioning

confidence: 99%

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

Wang

Gong

et al. 2022

Sci. China Mater.

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The construction of p-NiO/n-Ga 2 O 3 heterojunction becomes a popular alternative to overcome the technological bottleneck of p-type Ga 2 O 3 for developing bipolar power devices for practical applications, whereas the identification of performance-limiting traps and the bipolar transport dynamics are still not exploited yet. To this end, the fundamental correlation of carrier transport, trapping and recombination kinetics in NiO/β-Ga 2 O 3 p + -n heterojunction power diodes has been investigated. The quantitative modeling of the temperature-dependent current-voltage characteristics indicates that the modified Shockley-Read-Hall recombination mediated by majority carrier trap states with an activation energy of 0.64 eV dominates the trap-assisted tunneling process in the forward subthreshold conduction regime, while the minority carrier diffusion with near-unity ideality factors is overwhelming at the bias over the turn-on voltage. The leakage mechanism at high reverse biases is governed by the Poole-Frenkel emissions through the β-Ga 2 O 3 bulk traps with a barrier height of 0.75 eV, which is supported by the identification of majority bulk traps with the energy level of E C − 0.75 eV through the isothermal capacitance transient spectroscopic analysis. These findings bridge the knowledge gap between bipolar charge transport and deeplevel trap behaviors in Ga 2 O 3 , which is crucial to understand the reliability of Ga 2 O 3 bipolar power rectifiers.

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Band Alignment and Interface Recombination in NiO/β-Ga₂O₃ Type-II p-n Heterojunctions

Cited by 89 publications

References 32 publications

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

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Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions

Cited by 89 publications

References 32 publications

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

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Band Alignment and Interface Recombination in NiO/β-Ga₂O₃ Type-II p-n Heterojunctions

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction