2023
DOI: 10.1016/j.mssp.2022.107161
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Band alignment study of 2D-2D heterointerface of MoSe2 with Ti3C2Tx (transport layer) for flexible broadband photodetection

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Cited by 14 publications
(7 citation statements)
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“…Also, by doping the device with external dopants, these surface states which were on the atomic layers of solid device are replaced by the dopant atoms consequently enhancing the device performance [12,13]. Conventional photodetectors suffer from a lot of drawbacks like low absorption, defects that are formed during fabrication process, poor responsivity, expensive synthesis procedures which makes them unsuitable in many applications in demand [14][15][16][17]. Hence there is a need to search for new material which will have suitable properties that can serve the purpose, and one such materials are 2D materials.…”
Section: Introductionmentioning
confidence: 99%
“…Also, by doping the device with external dopants, these surface states which were on the atomic layers of solid device are replaced by the dopant atoms consequently enhancing the device performance [12,13]. Conventional photodetectors suffer from a lot of drawbacks like low absorption, defects that are formed during fabrication process, poor responsivity, expensive synthesis procedures which makes them unsuitable in many applications in demand [14][15][16][17]. Hence there is a need to search for new material which will have suitable properties that can serve the purpose, and one such materials are 2D materials.…”
Section: Introductionmentioning
confidence: 99%
“…Analyzing the heterostructure by ultraviolet photoelectron spectroscopy and extracting the real-time band structures open new pathways for researchers to select the appropriate materials for the transport layer with potential applications in the field of optoelectronics and solar cells. 122…”
Section: Two-dimensional Tmd/mxene-based Photodetectorsmentioning
confidence: 99%
“…The differences are due to the flake-to-flake variation in the single CVD run. Spectral responsivity is defined as the ability of a device to convert incident light energy into the corresponding electrical energy at the respective wavelengths 53 (unit: A/W).…”
Section: ■ Introductionmentioning
confidence: 99%