Band anticrossing in dilute InNxSb1−x

Abstract

Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InN x Sb 1Ϫx alloys with absorption edge near 15 m, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InN x Sb 1Ϫx by a tight binding calculation for low nitrogen concentration (xϽ0.01).

Optical Properties of Closely Coupled Dilute Nitride Mid-Infrared InNSb Quantum Dots

“…Based on our calculation, where the conduction band interaction with a localized nitrogen band at E N =0.42 eV, the conduction band reduction of InNSb would be only 50meV, which results the expected band alignment belongs to the type-II structure. [13,14] The strong carrier spill over seems to occur as elevating the temperature since the current structure didn't have properly designed barrier layers.…”

Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition

“…By adding a small amount of nitrogen into the InSb, the cut-off wavelength of the alloy could be extended to longer wavelength due to the negative band gap bowing effect, which provides a new candidate for long wavelength photodetection. Theoretical calculation using k.p model reveals that the N content x required for a band gap reduction of 0.1 eV in InSb 1 À x N x alloy is only about 0.01 [7], which is much lower than those required for other alloys like InAsSb, InTlSb and InSbBi [8][9][10]. So far, the InSbN alloys reported are mostly fabricated by molecular beam epitaxy (MBE) and ion implantation techniques [11][12][13].…”

Electron dynamics in InNxSb1−x

“…7,8 Quantification of the amount of nitrogen present in InN x Sb 1Ϫx epilayers has proved to be a major difficulty. 8 However, this material represents the first fabrication of this alloy and several growth related issues still need to be resolved.…”