Band bending in Au/Pb(Zr,Ti)O 3  investigated by X-ray photoelectron spectroscopy: Dependence on the initial state of the film

Apostol, Nicoleta G.; Stoflea, Laura E.; Lungu, George A.; Tănase, Liviu Cristian; Chirilă, Cristina; Frunză, Ligia; Pintilie, L.; Teodorescu, Cristian M.

doi:10.1016/j.tsf.2013.04.092

Cited by 29 publications

(26 citation statements)

References 28 publications

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“…The frequency of the C-V model parameters are in accordance with that of P-V measurement of 1 kHz, and no attempt was made to extend the model to other frequencies. 11,12,26 The results are shown in Fig. 5(b), which is similar to the experimental curve (Fig.…”

Section: Methodssupporting

confidence: 81%

The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film

Liang

Buditama

Chien

et al. 2015

Journal of Applied Physics

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A dense, homogeneous and crack-free ferroelectric PZT thin film with h100i-preferred orientation was produced using the sol-gel method. The volume fraction a (100) of h100i-oriented grains in the PZT film was calculated [a (100) % 80%] from XRD of the PZT thin film and powder. The PZT thin film exhibits an open polarization vs. electric field loop and a low leakage current density from 10 À8 A/cm 2 to 10 À7 A/cm 2. The electrical conduction data were fit to a Schottky-emission model with deep traps from 100 kV/cm to 250 kV/cm. A modified capacitance model was introduced that adds electrical domain capacitance based on a metal-ferroelectric-metal (MFM) system with Schottky contacts. The model reproduces the observed non-linear capacitance vs. voltage behavior of the film. V

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Section: Methodssupporting

confidence: 81%

The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film

Liang

Buditama

Chien

et al. 2015

Journal of Applied Physics

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“…For the case of an interface where a ferroelectric is involved, the SBH contains the effects of both band bending and depolarizing field, on the one hand, and, on the other hand, the intrinsic electronic contribution of the lineup at the interface. Thus, the height of the Schottky barrier, accounting for both the effects of depolarizing field and band bending [21,37,38], can be written as the sum…”

Section: B X-ray Photoelectron Spectroscopymentioning

confidence: 99%

“…The depolarization field in the FE, which tends to restore the local neutrality of the system, may be fully or partially screened by the metallic electrodes. This leads in turn to subtle variations of the internal field which influence the position of the x-ray photoelectron spectroscopy (XPS) peaks of the BaTiO 3 (BTO) and induce peculiar variations of photoemission features [19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Influence of hole depletion and depolarizing field on theBaTiO3/La0.6Sr0.4MnO3interface electronic structure revealed by photoelectron spectros

et al. 2015

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The effects of the bonding mechanism and band alignment in a ferroelectric (FE) BaTiO 3 /ferromagnetic La 0.6 Sr 0.4 MnO 3 heterostructure are studied using x-ray photoelectron spectroscopy and first-principles calculations. The band lineup at the interface is determined by a combination of band bending and polarization-induced modification of core-hole screening. A Schottky barrier height for electrons of 1.22 ± 0.17 eV is obtained in the case of downwards FE polarization of the top layer. The symmetry of the bonding states is emphasized by integrating the local density of states ±0.2 eV around the Fermi level, and strong dependence on the FE polarization is found: upwards, polarization stabilizes Ti t 2g (xy) orbitals, while downwards, polarization favors Ti t 2g (yz) symmetry. It is predicted that the abrupt (La,Sr)|TiO 2 interface is magnetoelectrically active, leading to a A-type antiferromagnetic coupling of the first TiO 2 interface layer with the underlying manganite layer through a superexchange mechanism.

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“…This band bending is of about 0.17 eV towards higher values on an absolute scale, or lower binding energies. Following the assumptions illustrated in Figure 1 of reference [ 45 ] for typical cases of band bendings, see Figure 1 of reference [ 48 ] for explanation of the band bending assessment by using core levels, and Figure 1b ,c of reference [ 49 ] for proof of these assessments, the band bending derived in the actual case deviates from the expected value due to the difference of workfunctions between Mn (4.1 eV) and Ge (5.0 eV) [ 50 ], which should induce a band bending towards higher binding energies, by some 0.9 eV. This confirms that no bulk metal manganese is formed on Ge(001), but rather a compound whose workfunction (~5.17 eV) is close to that of germanium.…”

Section: Resultsmentioning

confidence: 99%

“…As argued in references [52,53], associating separate background factors to each XPS component allows one to discriminate between the bulk and the surface nature of each one of these components. Also, the Ge 3d levels were fitted with the same Lorentzian and Gaussian widths for all lines, whereas for 2p spectra (Mn and Ge) the Lorentzian width was allowed to increase from the lower binding energy (2p 3/2 ) to the higher binding energy (2p 1/2 ) line, owing to supplementary Coster-Kronig decay channels, yielding lower core hole lifetimes for the higher binding energy lines [45,48,49,52,53]. …”

Section: Methodsmentioning

confidence: 99%

Room Temperature Ferromagnetic Mn:Ge(001)

et al. 2013

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We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

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Band bending in Au/Pb(Zr,Ti)O 3 investigated by X-ray photoelectron spectroscopy: Dependence on the initial state of the film

Cited by 29 publications

References 28 publications

The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film

The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film

Influence of hole depletion and depolarizing field on theBaTiO3/La0.6Sr0.4MnO3interface electronic structure revealed by photoelectron spectros

Room Temperature Ferromagnetic Mn:Ge(001)

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