2012
DOI: 10.1021/cr3000626
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Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

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Cited by 2,151 publications
(1,906 citation statements)
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“…Metal deposited TiO 2 shows an absorption band in the visible region due to surface plasmon resonance (SPR) effect [19]. SPR is a characteristic feature of any metal nanoparticle deposited on semiconductor and this effect arises as a result of collective modes of oscillation of the free CB electrons induced by its interaction with electromagnetic field [20]. At the semiconductor/metal interface a significant redistribution of charge occurs due to the overlap of the wave functions from the two sides, depending on the work function of metal and semiconductor.…”
Section: Introductionmentioning
confidence: 99%
“…Metal deposited TiO 2 shows an absorption band in the visible region due to surface plasmon resonance (SPR) effect [19]. SPR is a characteristic feature of any metal nanoparticle deposited on semiconductor and this effect arises as a result of collective modes of oscillation of the free CB electrons induced by its interaction with electromagnetic field [20]. At the semiconductor/metal interface a significant redistribution of charge occurs due to the overlap of the wave functions from the two sides, depending on the work function of metal and semiconductor.…”
Section: Introductionmentioning
confidence: 99%
“…The CB edge position of anatase is found to be slightly higher compared to that of the rutile phase [55,56]. The work function of the rutile is slightly lower than that of anatase, which causes the energy bands of rutile to bend upwards and energy bands of anatase to bend downwards [16,57]. The established electric fields near the interface makes the electrons move downhill and holes move uphill.…”
Section: Photodegradation Of Rsmentioning
confidence: 94%
“…When m > s the energy bands bend upwards at the interface, and when m < s the energy bands bend downwards. The work function difference between the metal and the semiconductor influences the degree of V BB at the interface [16,[40][41][42][43].…”
Section: Transmission Electron Microscopic (Tem) Analysismentioning
confidence: 99%
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