Band diagram of the Si-LiNbO3 heterostructures grown by radio-frequency magnetron sputtering

Иевлев, В. М.; Sumets, M.; Kostyuchenko, А. V.; Ovchinnikov, O. V.; Vakhtel, V.M.; Канныкин, С. В.

doi:10.1016/j.tsf.2013.06.080

Cited by 14 publications

(6 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Apparently, formation of the intermediate layer is mainly attributed to the extensive in situ bombardment of the sputtered species. Note that films obtained at lower reactive gas pressure do not manifest an inhomogeneous layer [17]. As regards the sample LN3, a highly conducting intermediate SiO 2 layer is formed between Si substrate and LiNbO 3 film grown at the similar sputtering conditions [18].…”

Section: Resultsmentioning

confidence: 93%

“…Analysis of the X-ray diffraction results for LN2-T sample demonstrates (see Fig. 6) that TA of Si-LiNbO 3 heterostructures triggers recrystallization of the films with an increase of the average grain size up to 1.5 times (about 70 nm) and weakens of the texture compared with as-grown films [13,17]. It is important to emphasize, that TA of the as grown LiNbO 3 films leads to the formation of LiNb 3 O 8 phase.…”

Section: Resultsmentioning

confidence: 99%

“…2), TA gives rise to the portion of LiNb 3 O 8 in films. Based on the calculation using the ratio of peaks of the material to Table 2 Elemental composition of films related to the sample LN1 (see Table 1 Table 3 Elemental composition of films related to the sample LN1-T (see Table 1) Structural properties of the LN2 and LN3 samples have been reported in our previous works [17,18], so at the present paper we have investigated similar properties of LN2-T and LN3-T samples. Analysis of the X-ray diffraction results for LN2-T sample demonstrates (see Fig.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Sumets

Kostyuchenko

Иевлев

et al. 2015

J Mater Sci: Mater Electron

Self Cite

View full text Add to dashboard Cite

C-oriented polycrystalline lithium niobate (LiNbO 3 ) films have been deposited on Si substrate by the radio-frequency magnetron sputtering method in an Ar atmosphere and Ar ? O 2 gas mixture. All as-grown LiNbO 3 films manifested positive fixed oxide charge regardless of the sputtering conditions. Donor centers are formed in Si substrate because of diffusion of O 2 molecules during sputtering process. Thermal annealing (TA) of the deposited films leads to increase in the surface roughness and grain size as well as formation of LiNb 3 O 8 phase in the studied films. Also, TA resulting in the decline of positive oxide charge due to the diffusion of oxygen molecules into LiNbO 3 films from air and out-diffusion from Si substrate.

show abstract

Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Sumets

Kostyuchenko

Иевлев

et al. 2015

J Mater Sci: Mater Electron

Self Cite

View full text Add to dashboard Cite

show abstract

“…8 that Richardson-Schottky emission is the main conduction mechanism for the sample LN 134 and graph V o vs. kT/q is a straight line with a slope n = 40. We obtained parameter β through the graph ln(J/(ET 2/3 ) vs. 1/T (not shown) as has been done in [19], and taking into account that ε = 28 [7] we calculated the value of the barrier height φ b = 0.012eV following the expressions (13) for the average electric field E = 4·10 6 V/m. Too low value of the apparent barrier height φ app can be explained by the fact that ferroelectric polarization P can reduce the true barrier height φ b as has been mentioned earlier (see (4)).…”

Section: Resultsmentioning

confidence: 99%

“…The magnitudes of changes in the bandedge energies are critically important for many devices such as random-access memory units, ferroelectric capacitors, etc. Taking into account that C-V and I-V characteristics of the heterostructures being powerful investigative tools, are greatly influenced by barrier properties [18,19], it is important to study the electron phenomena at the Si-LiNbO 3 heterostructures formed in different technological conditions inside out.…”

Section: Introductionmentioning

confidence: 99%

Influence Sputtering Conditions on Electrical Characteristics of Si-LiNbO₃Heterostructures Formed by Radio-Frequency Magnetron Sputtering

Sumets

Иевлев

Kostyuchenko

et al. 2014

Molecular Crystals and Liquid Crystals

Self Cite

View full text Add to dashboard Cite

Polycrystalline LiNbO 3 films on (001)Si substrate were grown by radio-frequency magnetron sputtering process at different sputtering conditions. X-ray diffraction analysis showed that films formed in Ar environment (P = 5.0 × 10 −1 Pa) having two-phase composition (LiNbO 3 , LiNb 3 O 8 ) transformed into c-axes-oriented LiNbO 3 films when Ar pressure declined up to P = 1.5 × 10 −1 Pa. This induced an increase in positive oxide charge and coercive field due to formation of defects in the LiNbO 3 layer. Using Ar + O 2 reactive gas mixture led to decline in defect formation (positive oxide charge) and coercive field. Current-voltage and capacitance-voltage analyses demonstrated that barrier properties of the Si-LiNbO 3 heterojunctions are affected by the plasma composition.

show abstract

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

View full text Add to dashboard Cite

In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

show abstract

Band diagram of the Si-LiNbO3 heterostructures grown by radio-frequency magnetron sputtering

Cited by 14 publications

References 27 publications

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Influence Sputtering Conditions on Electrical Characteristics of Si-LiNbO₃Heterostructures Formed by Radio-Frequency Magnetron Sputtering

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Contact Info

Product

Resources

About

Band diagram of the Si-LiNbO3 heterostructures grown by radio-frequency magnetron sputtering

Cited by 14 publications

References 27 publications

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

Influence Sputtering Conditions on Electrical Characteristics of Si-LiNbO3Heterostructures Formed by Radio-Frequency Magnetron Sputtering

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Contact Info

Product

Resources

About

Influence Sputtering Conditions on Electrical Characteristics of Si-LiNbO₃Heterostructures Formed by Radio-Frequency Magnetron Sputtering

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications