Band Diagrams of BaSi₂/Si Structure by Kelvin Probe and Current–Voltage Characteristics

Abstract

The band diagrams of the BaSi 2 /Si heterostructure were investigated using a Kelvin probe and its current-voltage (I-V) characteristics. Ga-doped n-type degenerate BaSi 2 was grown on Si(111) by molecular beam epitaxy (MBE), and its work function, which is almost the same as its electron affinity, was evaluated to be approximately 3.2 eV by a Kelvin probe. A distinct rectifying behavior was observed in the I-V characteristics of isotype n-BaSi 2 /n-Si diodes due to an energy barrier for electrons traversing from n-Si to n-BaSi 2 .

Energetic evaluation of possible insertion sites of Cu into BaSi2 using first principle calculations

“…Though there is some scattering of the calculated values for the same crystallographic sites, 4 we can see definite tendency from Table 2. That is, the electronic energies of the sites (D) are the most positive (i.e.…”

Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

“…However, since there are large conduction and valence band discontinuities at the BaSi 2 /Si heterointerface due to the much smaller electron affinity of BaSi 2 compared with that of Si [16].…”

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

“…25,26 Javey's group applied MoO x to crystalline Si (c-Si) solar cells and reported a conversion efficiency of 14.3% for an unpassivated MoO x /n-c-Si solar cell and then 18.8% for a passivated MoO x /a-Si:H/n-c-Si solar cell, in which the MoO x layer functioned as a hole transport layer. 27,28 Undoped BaSi 2 also exhibits n-type conductivity and a work function that is smaller than that of n-Si; 29 therefore, we aimed to fabricate similar MoO x /n-BaSi 2 structure solar cells by thermal evaporation of MoO x on an unpassivated or passivated undoped n-BaSi 2 layer. Open circuit voltage (V OC ) and short circuit current density (J SC ) measurements of indium tin oxide (ITO)/MoO x /n-BaSi 2 heterojunction diodes were then conducted under AM1.5 illumination.…”