Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering

Abstract

We have grown the InN films with high orientation and various typical micrographs on Si (100) substrate by radio-frequency (RF) sputtering, with Indium used as Indium target, and Nitrogen as Nitrogen source. The X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) show that all the diffraction peaks are identified to be associated with the wurtzite phase of InN, with high orientation of (101), (100) and (002). The Scanning Electron Microscope (SEM) and Energy Diffraction Spectrum (EDS) reveal that the high-quality crystal films of InN with various typical microstructures could be deposited, especially the standard of the hexagon at 60 W and 0.4 Pa. We also calculated the stress of InN films in E2 (High) by Raman spectra with an excitative wave length λ= 633 nm at room temperature. The values of the stress are different due to various microstructures. The A1 (LO) peaks are lower due to the high mobility. The calculated energies are 1.07, 1.13 and 1.32 eV. The XRD, SEM, XPS, Raman spectra, Hall and UV absorption characterizations demonstrate that we could grow different microstructures of thin films to meet the various requirements of sensors and other devices.