Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Agbenyeke, Raphael Edem; Song, Soomin; Park, Bo Keun; Kim, Gon−Ho; Yun, Jae Ho; Chung, Taek‐Mo; Kim, Chang Gyoun; Han, Jeong Hwan

doi:10.1002/pip.3012

Cited by 14 publications

(1 citation statement)

References 34 publications

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“…[5][6][7] Numerous experiments have been conducted to solve this problem by replacing the existing buffer layer and TCO layer with the representative wide band gap materials such as In 2 O 3 , Zn x Sn 1−x O, and Zn 1−x Mg x O. [8][9][10][11][12] However, relative high resistive properties of substitutes and band alignment between the CIGS layer and the substitutes became a problem, which did not contribute to the improvement of the performance of the CIGS thin-film solar cells. 13,14 On the other hand, there have been studies of applying downconversion layer using materials such as ZnO nanoparticle, organic dye, and Yb-doped SnO x .…”

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confidence: 99%

Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response

Cho

Lee

et al. 2021

ECS J. Solid State Sci. Technol.

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The short-wavelength optical loss in the Cu(In,Ga)Se2 (CIGS) thin-film solar cells is inevitable owing to the substantial light absorption in the front layers such as the buffer layer and transparent conducting oxide (TCO) layer. Quantum dots (QDs) with CdSe/ZnS core–shell structure is utilized to increase the short-wavelength spectral response of the CIGS thin-film solar cells. The QDs absorbs photons in the short-wavelength region (<540 nm) and re-emits the photons at approximately 540 nm; these photons penetrate the front layers and reach the CIGS absorber layer. The thickness of the QD layer was varied via drop coating with different QD concentrations, thereby facilitating the application of the optimized QD layer as a down-conversion layer in the CIGS thin-film solar cells. The photoelectric parameters of the CIGS thin-film solar cells were dependent on the QD thickness, and they were characterized using quantum efficiency measurements, spectrophotometric analysis, and current–voltage measurements. The CIGS thin-film solar cells with a 0.7 μm-thick QD layer exhibited the highest increase of 1.86 mA cm−2 and 0.75% in the short-circuit current density and efficiency, respectively.

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confidence: 99%

Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response

Cho

Lee

et al. 2021

ECS J. Solid State Sci. Technol.

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Enhancement of Cd‐Free All‐Dry‐Processed Cu(In_1‐x,Ga_x)Se₂ Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn_1‐_xMg_xO Buffer

Park,

Jo,

Cho

et al. 2024

Energy & Environ Materials

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Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance, as in a wide bandgap Zn1‐xMgxO (ZMO) to replace the CdS buffer in Cu(In1‐x,Gax)Se2 (CIGSe) thin‐film solar cell structure. ZMO is one of the candidates for the buffer material in CIGSe thin‐film solar cells with a wide and controllable bandgap depending on the Mg content, which can be helpful in attaining a suitable conduction band offset. Hence, compared to the fixed and limited bandgap of a CdS buffer, a ZMO buffer may provide advantages in Voc and Jsc based on its controllable and wide bandgap, even with a relatively wider bandgap CIGSe thin‐film solar cell. In addition, to solve problems with the defect sites at the ZMO/CIGSe junction interface, a few‐nanometer ZnS layer is employed for heterojunction interface passivation, forming a ZMO/ZnS buffer structure by atomic layer deposition (ALD). Finally, a Cd‐free all‐dry‐processed CIGSe solar cell with a wider bandgap (1.25 eV) and ALD‐grown buffer structure exhibited the best power conversion efficiency of 19.1%, which exhibited a higher performance than the CdS counterpart.

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Direct Solution Processed Ag(Bi_x,Sb_1−x)S₂ Films with Tunable Bandgap for Planar Heterojunction Solar Cells

et al. 2022

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Metal chalcogenides have been intensively studied as lightharvesting materials for thin film solar cells. Strikingly, CdTe-and Cu(In,Ga)Se 2 -based solar cells have been successfully commercialized because their power conversion efficiencies (PCEs) have reached to over 22%. [1] Such excellent achievements have stimulated intense interest in exploring new metal chalcogenide light-harvesting materials, with particular interest in those with the properties of stability, earth-abundancy, and environmentally friendly constituents. For this purpose, a series of emerging materials such as AgBiS 2 , [2] AgSbS 2 , [3] Sb 2 (Se,S) 3 , [4] and SnS [5] have been examined for solar cell applications. Notably, alloy compound silver bismuth antimony sulfide (Ag(Bi) is considered as a promising light absorber candidate for solar cells owing to its nontoxic characteristic and superior stability with the maximum absorption coefficient up to %10 5 cm À1 . Specially, owing to AgSbS 2 with the bandgap of around 1.7 eV, AgBiS 2 with the bandgap of around 1.1 eV, and the identical face-centered cubic crystal structure of AgBiS 2 and AgSbS 2 , the bandgap of Ag(Bi x ,Sb 1Àx )S 2 can be regulated from around 1.70 to 1.10 eV by varying the ratio of Bi/(Bi þ Sb). [2,3,6] This tunability enables Ag(Bi x ,Sb 1Àx )S 2 to closely match the ideal bandgap of 1.34 eV for single-junctional photovoltaics, which generates PCE of 32% according to the Shockley-Queisser theory.However, to the best of our knowledge, the current research mainly focuses on the synthesis of AgBiS 2 quantum dots and AgSbS 2 thin films for solar cells. [7] However, the method for depositing Ag(Bi x ,Sb 1Àx )S 2 alloy thin film has not been explored so far, which restricts the investigation of the compositiondependent photoelectric properties. Therefore, in order to apply Ag(Bi x ,Sb 1Àx )S 2 in thin film solar cells, it would be desirable to introduce a suitable method to prepare Ag(Bi x ,Sb 1Àx )S 2 films with continuously tunable Bi/(Bi þ Sb) ratio, which, in turn, makes it achievable to systematically investigate the compositiondependent properties such as bandgap, band position tunability, and photovoltaic characteristics. Accordingly, one can get a valuable guidance to realize optimal bandgap, band alignment, and back field grading for preparing better performant solar cell, which is similar to the Ga/In alloying in Cu(In,Ga)Se 2 thin film solar cells. [8] Herein, we develop a convenient solution approach for depositing Ag(Bi x ,Sb 1Àx )S 2 films. Through this method, the composition could be facile tuned by varying Bi and Sb loading in the precursor solution, facilitating the fabrication of Ag(Bi x , Sb 1Àx )S 2 films with continuously tunable constituents as well as the bandgaps. We disclose that the changes in the bandgap of Ag(Bi x ,Sb 1Àx )S 2 are not linear monotonic with respect to the Bi/(Bi þ Sb) ratio, showing bowing behavior. Finally, through optimizing the Bi/(Bi þ Sb) ratio, the PCE of Ag(Bi x ,Sb 1Àx )S 2 -

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Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Cited by 14 publications

References 34 publications

Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response

Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response

Enhancement of Cd‐Free All‐Dry‐Processed Cu(In_1‐x,Ga_x)Se₂ Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn_1‐_xMg_xO Buffer

Direct Solution Processed Ag(Bi_x,Sb_1−x)S₂ Films with Tunable Bandgap for Planar Heterojunction Solar Cells

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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Cited by 14 publications

References 34 publications

Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response

Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response

Enhancement of Cd‐Free All‐Dry‐Processed Cu(In1‐x,Gax)Se2 Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn1‐xMgxO Buffer

Direct Solution Processed Ag(Bix,Sb1−x)S2 Films with Tunable Bandgap for Planar Heterojunction Solar Cells

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Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Enhancement of Cd‐Free All‐Dry‐Processed Cu(In_1‐x,Ga_x)Se₂ Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn_1‐_xMg_xO Buffer

Direct Solution Processed Ag(Bi_x,Sb_1−x)S₂ Films with Tunable Bandgap for Planar Heterojunction Solar Cells