Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application

Wibowo, Rachmat Adhi; Kim, Kyoo Ho

doi:10.1016/j.solmat.2008.11.020

Cited by 13 publications

(8 citation statements)

References 11 publications

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“…The decrease in the crystallite size is probably due to the small ion size of Zn 2+ (radius = 0.74 Å) compared to that of In 3+ (radius = 0.81 Å). These results are similar to those obtained with CuInGaSe powders [11] and radiofrequency (RF)-sputtered CuInZnS thin films [14], where the incorporation of impurities as Zn or Ga in the CuInSe 2 compound reduced the intensity of the peaks and the grain sizes from 24.8 to 22.5 nm. The behavior of Zn is the same as the behavior of Ga in CuInSe powders.…”

Section: Structural Properties Of Cuin 1-x Zn X Se 2 Nanopowderssupporting

confidence: 85%

“…The EDX results presented in Table 2 show that the atomic percentage of indium decreased with the increase in the concentration of Zn x in CuIn 1-x Zn x Se 2 powders. The apparent reduction of indium in CuIn 1-x Zn x Se 2 powders in the form of Zn x is due to an anti-site substitution of Zn x in the sites of indium within the chalcopyrite structure [14]. A slight variation was also noticed between the composition of the individual particles measured by EDX and the ratio of the precursor taken at the starting precursor composition.…”

Section: Morphology and Compositional Analysis Of Cuin 1-x Zn X Se 2 ...mentioning

confidence: 88%

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Syntheses and Characterizations of CuIn1-xZnxSe2 Chalcopyrite Nanoparticles

et al. 2022

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CuIn1-xZnxSe2 powders with various atomic percentages (x = 0, 0.05, 0.11, 0.16 and 0.21) were synthesized with the solvothermal method using metal chlorides and ethylendiamine as sources of precursors and a solvent, respectively. The experiment aims to investigate the effect of atomic percentages of Znx compounds on the structural and optical properties of CuIn1-xZnxSe2 in order to improve future technological applications based on this material. The powders’ chalcopyrite phases were identified by X-ray diffraction. Energy dispersive X-ray spectroscopy analysis revealed the presence of Cu, In, Zn and Se with the expected atomic ratio of Zn/(In + Zn). Scanning electron microscopy and transmission electron microscopy analysis showed that the powders have large-scale desert rose-like structures. The nanopowders’ optical study by UV-visible spectrophotometry showed that the CuIn1-xZnxSe2 energy gap values increase with the molar fraction of Znx. A change from 1.15 to 1.4 eV was observed.

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Section: Structural Properties Of Cuin 1-x Zn X Se 2 Nanopowderssupporting

confidence: 85%

Section: Morphology and Compositional Analysis Of Cuin 1-x Zn X Se 2 ...mentioning

confidence: 88%

Syntheses and Characterizations of CuIn1-xZnxSe2 Chalcopyrite Nanoparticles

et al. 2022

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“…In recent years, the quaternary Cu-In-Zn-Se (CIZS) structures employed Zn as an alternative to In and Cu [5][6][7][8][9][10][11][12][13] . This structure is the analogy of 2ZnSe-CuInSe 2 system, where the general form can be written as (CuInSe 2 ) 1−x (2ZnSe) x [7] .…”

Section: Introductionmentioning

confidence: 99%

“…In addition to the cost problem, to overcome the other obstacle related to band gap, the works have been concentrated on this quaternary alloy that can have a band gap variation from 1.05 eV (CIS) [14] to 2.72 eV (ZS) [15] . Due to the recent focus on material cost and band gap engineering in photovoltaic applications, there was some research concentrated on understanding the material properties of this structure in both crystal and thin film forms [5][6][7][8][9][10][11][12][13] . Among them, the reported works were initiated with the crystal growth and characterization of (CuInSe 2 ) 1−x (2ZnSe) x structure [7,8] and additionally crystallographic and material properties were investigated on (CuIn) 1−x Zn 2x Se 2 powder synthesized by heating of the mixed constituent elements [5,9,10] .…”

Section: Introductionmentioning

confidence: 99%

Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

Güllü

Parlak

2017

J. Semicond.

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The Cu–In–Zn–Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu–In–Zn–Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the (112) direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu0.5In0.5ZnSe2. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 105 cm−1 in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark- and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.

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“…22) Some research groups reported how the addition of Zn influences the microstructure and composition of CuInSe 2 (Zn 2x Cu 1−x -In 1−x Se 2 , ZCISe). [22][23][24][25] However, there are few reports on ZnCuGaSe 2 (Zn 2x Cu 1−x Ga 1−x Se 2 , ZCGSe). 26) In this contribution, we report on the characteristics of the ZCGSe films and performance of the ZCGSe solar cells.…”

Section: Introductionmentioning

confidence: 99%

Wide-gap solar cells using a novel ZnCuGaSe₂absorber

Yamamoto

Negami

Matsubara

et al. 2015

Jpn. J. Appl. Phys.

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We successfully prepared ZnCuGaSe2 (Zn2xCu1−xGa1−xSe2, ZCGSe) thin films as a novel wide-gap absorber for a top cell. The bandgap of ZCGSe films was controlled from 1.66 to 1.80 eV by incorporating Zn into CuGaSe2 (CGSe, x from 0 to 0.4). The X-ray diffraction (XRD) peaks of ZCGSe films with the Zn/(Zn + Cu + Ga) (Zn/Metal) ratio of the film of less than 0.3 were similar to those of CGSe, and impurity phases such as Ga2Se3 and ZnSe were not observed. However, the peaks related to ZnSe were observed in the film with the Zn/Metal ratio of 0.4. Current–voltage (I–V) characteristics showed that efficiencies were almost the same at the Zn/Metal ratio of the films from 0.1 to 0.3. The open-circuit voltage (VOC) increased to 0.91 V with increasing Zn/Metal ratio of the film. However, the efficiency and short-circuit current density (JSC) steeply decreased when the Zn/Metal ratio of the film was more than 0.35. The elemental depth profiles and the electron-beam-induced current (EBIC) images showed that carriers excited in a Zn-rich layer near the surface were recombined in the film with the bulk Zn/Metal ratio of 0.4. These results suggest that the upper Zn-rich layer consists of n-type ZnSe and the JSC is decreased owing to carrier recombination. The best cell performance obtained was an efficiency of 9.0% (VOC = 0.90 V, JSC = 15.3 mA/cm2, FF = 0.65) achieved by the ZCGSe solar cell with the bandgap of 1.7 eV without an anti-reflection (AR) coating at the Zn/Metal ratio of 0.3.

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Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application

Cited by 13 publications

References 11 publications

Syntheses and Characterizations of CuIn1-xZnxSe2 Chalcopyrite Nanoparticles

Syntheses and Characterizations of CuIn1-xZnxSe2 Chalcopyrite Nanoparticles

Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

Wide-gap solar cells using a novel ZnCuGaSe₂absorber

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Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application

Cited by 13 publications

References 11 publications

Syntheses and Characterizations of CuIn1-xZnxSe2 Chalcopyrite Nanoparticles

Syntheses and Characterizations of CuIn1-xZnxSe2 Chalcopyrite Nanoparticles

Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

Wide-gap solar cells using a novel ZnCuGaSe2absorber

Contact Info

Product

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Wide-gap solar cells using a novel ZnCuGaSe₂absorber