2015
DOI: 10.1186/s11671-015-1034-9
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Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials

Abstract: Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase. UV-visible spectr… Show more

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Cited by 315 publications
(97 citation statements)
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“…Therefore, the results indicate that the production of H 2 may not take place along a conventional water-splitting process. The data for H 2 production agree quite well with the results reported by other researchers 18,58 . Figure 7A shows the time-dependent photacatalytic H 2 generation through water splitting obtained from 0.5Ni-Si/MgO and 0.7Ni-Si/MgO samples.…”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…Therefore, the results indicate that the production of H 2 may not take place along a conventional water-splitting process. The data for H 2 production agree quite well with the results reported by other researchers 18,58 . Figure 7A shows the time-dependent photacatalytic H 2 generation through water splitting obtained from 0.5Ni-Si/MgO and 0.7Ni-Si/MgO samples.…”
Section: Resultssupporting
confidence: 91%
“…Here, the optical band gap energies of 0.5Ni-Si/MgO and 0.7Ni-Si/MgO were calculated from Tauc plots according to the relationship αhυ = C(hυ − E g ) 2 or (αhυ) 2 = C ′ (hυ − E g ), where α is the coefficient of absorption, hυ is the constant and E g is the band gap energy 58 , respectively. The evaluation of absorption coefficient was determined by α = Kln(R max -R min /R-R min ), where, maximum reflectance is the R max and the minimum reflectance is R min 58 . The estimation of band gap was performed by the plot (αhυ) 2 versus photon energy (hυ) and bandgap values for the 0.5Ni-Si/MgO and 0.7Ni-Si/MgO measured by the curve fitting were 2.48 eV and 2.58 eV respectively, as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…A band gap narrowing was exhibited, it was found to be 2.74 eV. The observed difference between the calculated band gap and the reported values [18] arises from embedding of the ZnO nanoparticles into the interstitial positions of the silicate matrix [19].…”
Section: Energy Band Gapmentioning
confidence: 68%
“…Other attempts to narrow the band gap of ZnO include doping with metal impurities such as Cu and Mn [72]. The impurities incorporated into the semiconductor can be located at the surface (inhomogeneous doping), or dispersed throughout the electrode material as a solid solution (homogeneous doping).…”
Section: Modifications Of Zno For Enhanced Photocatalytic Water Oxidamentioning
confidence: 99%