Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy

Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD

“…The decrease of E g can be attributed to two reasons: rst the band gap of SnO 2 is narrower than that of b-Ga 2 O 3 ; second the band gap narrowing effect. 28,29 For the heavily doped semiconductors, the band tail and impurity band will be generated; as the doping concentration increases from 0 to 10%, the band tail and impurity band extended, which makes the band tail and impurity band overlap. As a result to the actual width of the forbidden band becomes narrower.…”