2011
DOI: 10.1002/pssa.201100148
|View full text |Cite
|
Sign up to set email alerts
|

Band gap reduction and dielectric function of Ga1−xZnxN1−xOx and In1−xZnxN1−xOx alloys

Abstract: The band gap reductions, dielectric functions and absorption coefficients of the Ga 1Àx Zn x N 1Àx O x and In 1Àx Zn x N 1Àx O x (x ¼ 0.00, 0.25, 0.50, 0.75, and 1.00) alloys were calculated, employing the partial self-consistent GW approximation. As a comparison, the local density approximation (LDA) and the Heyd-Scueria-Ernzerhof (HSE) hybrid functional were also used to calculate the gap reduction. Both Ga 1Àx Zn x N 1Àx O x and In 1Àx Zn x N 1Àx O x alloys show strong band gap bowing. As a result, the band… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
19
0

Year Published

2012
2012
2021
2021

Publication Types

Select...
10

Relationship

2
8

Authors

Journals

citations
Cited by 24 publications
(21 citation statements)
references
References 23 publications
2
19
0
Order By: Relevance
“…In particulate heterogeneous photocatalyst systems, charge separation only relies on the formation of an effective semiconductor-electrolyte Schottky type of contact, and the efficient diffusion of charge carriers. The data points in Figure 2B represent experimentally measured absorption coefficients at different wavelengths, [11][12][13][50][51][52][53][54][55] where the inverse of this magnitude represents the penetration depth of the light into the semiconductor absorber. Thus, Figure 2A provides a qualitative and quantitative expectation of this charge collection region into the semiconductor photocatalyst based on carrier density.…”
Section: Resultsmentioning
confidence: 99%
“…In particulate heterogeneous photocatalyst systems, charge separation only relies on the formation of an effective semiconductor-electrolyte Schottky type of contact, and the efficient diffusion of charge carriers. The data points in Figure 2B represent experimentally measured absorption coefficients at different wavelengths, [11][12][13][50][51][52][53][54][55] where the inverse of this magnitude represents the penetration depth of the light into the semiconductor absorber. Thus, Figure 2A provides a qualitative and quantitative expectation of this charge collection region into the semiconductor photocatalyst based on carrier density.…”
Section: Resultsmentioning
confidence: 99%
“…The imaginary part of the dielectric function was calculated in the long wavelength limit from the joint density of states and the optical momentum matrix. Since the dielectric function in polar materials can depend strongly on the electron-phonon coupling, The results for ZnO and HfO2 are from calculations in this work using the GW0 method based on the DFT [28,32]; the first ZnO version neglects and the second includes phonon contributions. For SiO2 the first version is from an oscillator model [26], while the second is the present GW0 results.…”
Section: Calculation Of Dielectric Permittivitiesmentioning
confidence: 99%
“…The electronic structure neglecting electronphonon coupling is then obtained from the partial self-consistent GW 0 method where the Green's functions are updated iteratively, whereas the screened Coulomb potential W is fixed [14,15]. The imaginary part of the dielectric function is calculated in the long wavelength limit from the joint density of states and the optical momentum matrix.…”
mentioning
confidence: 99%