2022
DOI: 10.1039/d2ra00847e
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Band offset engineering at C2N/MSe2 (M = Mo, W) interfaces

Abstract: Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology.

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Cited by 8 publications
(13 citation statements)
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“…Besides, several studies calculated the band alignment for 2D/2D heterostructures such as h-BN/MoS 2 [54], MoSSe/GaAs [55], In 2 Se 3 /InSe [56] and MoS 2 /C 3 N [57] heterostructures. The band alignment can be used to determine the origin of charge transfer at the heterostructure and that of PtSSe/STO heterostructure was calculated using the feasible method specified for 2D/2D heterostructures [58]. The VB offset (VBO) is given by [58,59] VBO…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Besides, several studies calculated the band alignment for 2D/2D heterostructures such as h-BN/MoS 2 [54], MoSSe/GaAs [55], In 2 Se 3 /InSe [56] and MoS 2 /C 3 N [57] heterostructures. The band alignment can be used to determine the origin of charge transfer at the heterostructure and that of PtSSe/STO heterostructure was calculated using the feasible method specified for 2D/2D heterostructures [58]. The VB offset (VBO) is given by [58,59] VBO…”
Section: Resultsmentioning
confidence: 99%
“…The band alignment can be used to determine the origin of charge transfer at the heterostructure and that of PtSSe/STO heterostructure was calculated using the feasible method specified for 2D/2D heterostructures [58]. The VB offset (VBO) is given by [58,59] VBO…”
Section: Resultsmentioning
confidence: 99%
“…However, the lack of spatial separation between the VBM and CBM states poses a challenge for their practical use, leading to reduced light absorption efficiency due to the recombination of photoinduced electrons and holes. , To tackle this issue, various van der Waals heterostructures based on C 2 N and/or MoS 2 have been investigated. The electronic properties of C 2 N heterostructures, such as C 2 N/InSe and C 2 N/MSe 2 (M = Mo, W), can be significantly altered under vertical strain and electric field. For example, C 2 N/InSe exhibits a transition from type-II to type-I band alignment and an indirect to direct band gap under an electric field or modification of the interlayer distance.…”
Section: Introductionmentioning
confidence: 99%
“…26,27 To tackle this issue, various van der Waals heterostructures based on C 2 N and/or MoS 2 have been investigated. The electronic properties of C 2 N heterostructures, such as C 2 N/InSe 28 and C 2 N/MSe 2 (M = Mo, W), 29 can be significantly altered under vertical strain and electric field. For example, C 2 N/InSe exhibits a transition from type-II to type-I band alignment and an indirect to direct band gap under an electric field or modification of the interlayer distance.…”
Section: ■ Introductionmentioning
confidence: 99%
“…There are a range of synthesized organic compounds (natural or synthesized) that contain imine or azomethine groups [16] . Schiff bases, di‐imines or bis ‐Schiff bases have a broad biological potential and increased their significance during the past few years [17–23] . These compounds are typically synthesized by the condensation of aliphatic or aromatic aldehydes with primary amines (aliphatic or aromatic) using a catalytic amount of acid or base [24,25] .…”
Section: Introductionmentioning
confidence: 99%