2016
DOI: 10.1016/j.sse.2016.04.014
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Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics

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Cited by 4 publications
(2 citation statements)
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References 36 publications
(37 reference statements)
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“…Chang et al reported vanadium-doped MoO x films at different ammonium metavanadate concentrations. The smallest band offset (1.13 eV) between the valence band edge of V 0.05 MoO x and P3HT HOMO level favored the hole transport due to having the lowest resistance among all V-MoO x films [ 111 ]. Marchal et al reported a decrease of 3 nm in the surface roughness of MoO x HTL by adding 0.5 mol% of Zr and Sn via a combustion chemical deposition method at low temperatures [ 112 ].…”
Section: Hole-transporting Materials As Htls In Oscsmentioning
confidence: 99%
“…Chang et al reported vanadium-doped MoO x films at different ammonium metavanadate concentrations. The smallest band offset (1.13 eV) between the valence band edge of V 0.05 MoO x and P3HT HOMO level favored the hole transport due to having the lowest resistance among all V-MoO x films [ 111 ]. Marchal et al reported a decrease of 3 nm in the surface roughness of MoO x HTL by adding 0.5 mol% of Zr and Sn via a combustion chemical deposition method at low temperatures [ 112 ].…”
Section: Hole-transporting Materials As Htls In Oscsmentioning
confidence: 99%
“…Replacing the p-type a-Si:H with a doping-free transition metal oxide (TMO) such as molybdenum oxide (MoOx), is a viable alternative allowing conversion efficiency up to 23.5% [2] rivaling the traditional contact despite its lower level of optimization. Moreover, the hole selectivity capability of the MoOx is exploited for other classes of electronic devices such as organic lightemitting diodes [3], organic photovoltaic cells [4], thin-film solar cells [5]. Thus, the optimization of this hole-selective layer has been investigated over the past years, highlighting the role of the defect density of states (DOS) [6][7][8].…”
Section: Introductionmentioning
confidence: 99%