Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate

Zhang, X. H.; Chua, Soo Jin; Xu, Shengwei; Fan, Wenhui

doi:10.1063/1.367443

Cited by 6 publications

(3 citation statements)

References 39 publications

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“…Since there is a lack of experimental band line-up result of In 1 − x − y Ga x Al y As on InP over a wide composition range, we further verify the findings by comparing InGaAlAs/Al 0.48 In 0.52 As band line-up results to the theoretical calculation results using the first-principles pseudopotential method under virtual crystal approximation [30], as shown in Fig. 8.…”

Section: Figsupporting

confidence: 60%

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

et al. 2010

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The band-gap energy and the band line-up of InGaAlAs quaternary compound material on InP are essential information for the theoretical study of physical properties and the design of optoelectronics devices operating in the long-wavelength communication window. The bandgap interpolation of In 1 − x − y Ga x Al y As on InP is known to be a challenging task due to the observed discrepancy of experimental results arising from the bowing effect. Besides, the band line-up results of In 1 − x − y Ga x Al y As on InP based on previously reported models have limited success by far. In this work, we propose an interpolation solution using the single-variable surface bowing estimation interpolation method for the fitting of experimentally measured In 1 − x − y Ga x Al y As band-gap data with various degree of bowing using the same set of input parameters. The suggested solution provides an easier and more physically interpretable way to determine not only lattice matched, but also strained band-gap energy of In 1 − x − y Ga x Al y As on InP based on the experimental results. Interpolated results from this convenient method show a more favourable match to multiple independent experiment data sets measured under different temperature conditions as compared to those obtained from the commonly used weighted-sum approach. On top of that, extended framework of the model-solid theory for the band line-up of In 1 − x − y Ga ture is proposed. Our model-solid theory band line-up result using the proposed extended framework has shown an improved accuracy over those without the extension. In contrast to some previously reported works, it is worth noting that the band line-up result based on our proposed extended model-solid theory has also shown to be more accurate than those given by Harrison's model.

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Section: Figsupporting

confidence: 60%

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

et al. 2010

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“…Also, in the previous part, we saw that the structure with symmetry simplifies the calculation, so our design will be concurrent. Here, barriers are In 0.52 (Al x Ga 1-x ) 0.48 As, and the band offsets in such a heterostructure are E c =0.54x(eV) and E v =0.20x(eV) [23][24][25][26]. All remains is now to find the QW width z 0 in terms of the Al fraction x.…”

Section: A Quantum Wellmentioning

confidence: 99%

“…Timedomain coherent optical experiments show a big range for T phase [28][29][30][31][32][33]. Strongly interacting E-H pairs excited to high densities by band-to-band transitions show T phase of the order of a few 100fs [24]. Photon echo experiments on impurity-related bound excitons have revealed a much weaker exciton-exciton interaction with corresponding relaxation times up to 100ps [28,33,34].…”

Section: A Quantum Wellmentioning

confidence: 99%

Optical Modulation by Conducting Interfaces

Karimi

Khorasani

2013

IEEE J. Quantum Electron.

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Abstract-We analyze the interaction of a propagating guided electromagnetic wave with a quantum well embedded in a dielectric slab waveguide. First, we design a quantum well based on InAlGaAs compounds with the transition energy of 0.8eV corresponding to a wavelength of 1.55m. By exploiting the envelope function approximation, we derive the eigenstates of electrons and holes and the transition dipole moments, through solution of the Luttinger Hamiltonian. Next, we calculate the electrical susceptibility of a threelevel quantum system (as a model for the two-dimensional electron gas trapped in the waveguide), by using phenomenological optical Bloch equations. We show that the two-dimensional electron gas behaves as a conducting interface, whose conductivity can be modified by controlling the populations of electrons and holes the energy levels. Finally, we design a slab waveguide in which a guided wave with the wavelength of 1.55m experiences a strong coupling to the conducting interface. We calculate the propagation constant of the wave in the waveguide subject to the conducting interface, by exploiting the modified transfer matrix method, and establish it linear dependence on the interface conductivity. By presenting a method for controlling the populations of electrons and holes, we design a compact optical modulator with an overall length of around 60m. Most of these applications are realized using physical phenomena such as electrooptic, thermooptic, or magnetooptic effects to allow control over the propagation and transmission of optical wavefronts. Modulation speeds in excess of 50GHz have so far been achieved in the basic Mach-Zhender Modulator (MZM) configuration. While MZM could utilize virtually any physical effect to allow optical modulation, normally the linear electrooptic effect in bulk semiconductors is used. High speed modulation is also possible using internal modulation schemes, for instance, by direct current modulation [6,7]. However, most wideband applications require external modulation of light. A common material which is widely used in this area is LiNbO 3 . But there is a drawback in using MZMs as external modulators is that they normally require very long propagation lengths of the order of a few millimeters. This requirement makes the MZMs highly inappropriate for integrated fabrication. There is also another problem with routine material platforms, which happen to be incompatible with the standard III/V compound semiconductor technology. Index Terms-Hence, one should look for an alternative physical phenomenon other than the above, which would enable strong modulation, ease of fabrication, compatibility with III/V optoelectronics integration, linear response, tunability, and possibility of modern quantum optical applications including quantum information processing and cavity quantum electrodynamics.More than a decade ago, we coined the term Conducting Interface to a family of optoelectronic devices, in which the electrooptic effect is maintained by a surface accumulation or deplet...

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Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

Acuna,

Wu,

Bork

et al. 2024

Adv Funct Materials

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Terahertz technology has the potential to have a large impact in myriad fields, such as biomedical science, spectroscopy, and communications. Making these applications practical requires efficient, reliable, and low‐cost devices. Photoconductive switches (PCS), devices capable of emitting and detecting terahertz pulses, are a technology that needs more efficiency when working at telecom wavelength excitation (1550 nm) to exploit the advantages this wavelength offers. ErAs:InGaAs is a semiconductor nanocomposite working at this energy; however, high dark resistivity is challenging due to a high electron concentration as the Fermi level lies in the conduction band. To increase dark resistivity, ErAs:InGaAlBiAs material is used as the active material in a PCS detecting Terahertz pulses. ErAs nanoparticles reduce the carrier lifetime to subpicosecond values required for short temporal resolution, while ErAs pins the effective Fermi level in the host material bandgap. Unlike InGaAs, InGaAlBiAs offers enough freedom for band engineering to have a material compatible with a 1550 nm pump and a Fermi level deep in the bandgap, meaning low carrier concentration and high dark resistivity. Band engineering is possible by incorporating aluminum to lift the conduction band edge to the Fermi level and bismuth to keep a bandgap compatible with 1550 nm excitation.

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Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate

Cited by 6 publications

References 39 publications

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

Optical Modulation by Conducting Interfaces

Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

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