1989
DOI: 10.1002/mop.4650021004
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Band‐pass distributed amplifiers

Abstract: A novel band‐pass distributed amplifier design concept is presented. The amplifier can be realized in monolithic form using GaAs FETs. The amplifier has excellent wideband gain and phase response characteristics. It shows promise for applications in the millimeter wave region. In this paper the results of analytical modelling as well as computer simulations are discussed.

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Cited by 12 publications
(5 citation statements)
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“…The schematic of a bandpass distributed amplifier is shown in Figure l [2], which provide the appropriate midseries and midshunt image impedances at each section over a substantial portion of the passband.…”
Section: Bandpass Distributed Amplifiermentioning
confidence: 99%
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“…The schematic of a bandpass distributed amplifier is shown in Figure l [2], which provide the appropriate midseries and midshunt image impedances at each section over a substantial portion of the passband.…”
Section: Bandpass Distributed Amplifiermentioning
confidence: 99%
“…The equation for the magnitude of the voltage gain is given by [2] where g , is the transconductance of the FETs, n is the number of FETs, R,, and R,, are the image impedances of the gate and drain lines at the band-center frequency, w,, X , ( = w/w,,) is the normalized frequency, 6 ( = w 2 -w,/w,) is the normalized bandwidth, w1 and w2 are the lower and the upper radian cut-off frequencies, and A , and Ad are the attenuations per section of the gate and drain lines, respectively. The equations for gate and drain line attenuations are given by [2] As in low-pass distributed amplifiers [l], here the gain at the band-center frequency cannot be increased without limit by adding FETs in the amplifier. The gain increases with the addition of FETs up to a maximum value, and any further addition of FETs beyond this number will only decrease the gain.…”
Section: Bandpass Distributed Amplifiermentioning
confidence: 99%
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