“…The equation for the magnitude of the voltage gain is given by [2] where g , is the transconductance of the FETs, n is the number of FETs, R,, and R,, are the image impedances of the gate and drain lines at the band-center frequency, w,, X , ( = w/w,,) is the normalized frequency, 6 ( = w 2 -w,/w,) is the normalized bandwidth, w1 and w2 are the lower and the upper radian cut-off frequencies, and A , and Ad are the attenuations per section of the gate and drain lines, respectively. The equations for gate and drain line attenuations are given by [2] As in low-pass distributed amplifiers [l], here the gain at the band-center frequency cannot be increased without limit by adding FETs in the amplifier. The gain increases with the addition of FETs up to a maximum value, and any further addition of FETs beyond this number will only decrease the gain.…”