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Weegels, L. M.; Haverkort, J.E.M.; Leys, Maarten; Wolter, J.H.

doi:10.1103/physrevb.46.3886

Cited by 26 publications

(8 citation statements)

References 19 publications

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“…By applying a positive gate voltage one can increase the localization of the 2D electrons at the AlGaAs/GaAs heterointerfaces. In agreement with the recent calculations of Weegels et al [7], the band bending across the GaAs active layer is then increased and the PL intensity is reduced. Similar effects we observed in the ODCR performed for increased microwave power, which allows us to conclude that the optical detection of the 2D electron CR is related to the change of the band bending across the GaAs active layer caused by imposed microwave power.…”

Section: Discussionsupporting

confidence: 79%

“…This reflects the PL dependence on the potential across the GaAs active layer [6]. The band bending across the HEM stucture is reduced when photoexcited electrons neutralize ionized donors in the barrier and accumulate near the AlGaAs/GaAs interface [7]. The reduction of the band bending results in a spectral blue shift of the 2D-related PL emissions (towards a shorter wavelength) and increase in their intensity.…”

Section: Discussionmentioning

confidence: 99%

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Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

et al. 1995

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Optically detected cyclotroii resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a łong range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.

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Section: Discussionsupporting

confidence: 79%

Section: Discussionmentioning

confidence: 99%

Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

et al. 1995

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“…Indeed, the PLE spectrum at T = 40 K, reported in fig. non-resonant excitation above the GaAs barrier might suggest a major role of interface (surface) defects in the phenomenology presented, in analogy with the physics related to the photoreflectance experiments [5,6]. A similar PLE profile is also recovered in the presence of an optical bias, as shown in fig.…”

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confidence: 67%

Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures

et al. 1995

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We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems. PACS 78.66.Fd -III-V semiconductors. PACS 73.20.Dx -Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds). PACS 71.35 -Excitons and related phenomena (including electron-hole drops). PACS 78.55.Cr -III-V compounds and systems. PACS 01.30.Cc -Conference proceedings.InGaAs/GaAs strained-layer quantum wells (QW) exhibit a wider variety of relevant physical properties, when compared to GaAIAs/GaAs lattice-matched heterostructures, which makes them very interesting for device-related applications. This is due to the presence of strain[l], interface segregation[2], and large heavy-light-hole splittings. A correct characterization of the optical properties of these structures is therefore required and extremely useful.

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“…The HB emission is usually [1][2][3][4][5][6][7] described as the spatially indirect recombination between an electron from the 2DEG in the notch potential and a photocreated hole at some distance from the 2DEG. In the PL spectra it is observed as an emission band at an energy position between the GaAs bulk excitons and the donor acceptor pair (DAP) recombination, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The electrons accumulated in the active GaAs region are confined in a narrow notch (824) potential close to the heterointerface. The radiative recombination involving the electrons in this quasi twodimensional electron gas (2DEG) has been extensively studied [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface

et al. 1997

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Band-structure modifications due to photogenerated carriers in a GaAs/AlxGa1

Cited by 26 publications

References 19 publications

Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures

Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface

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