2020
DOI: 10.1103/physrevb.102.115113
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Band structure of a HgTe-based three-dimensional topological insulator

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Cited by 13 publications
(15 citation statements)
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“…IV E, varying the total charge density n tot by gate voltage in an asymmetric system results in a variation of the corresponding band structure. While these effects play a major role in thicker samples [17], in our case, the differences between band structures calculated at boundary values of n tot are not significant with the accessible energy resolution. Therefore the experimental results are compared to a single theoretical band structure, that was obtained at a total density n tot = 5 • 10 11 cm −2 , i.e.…”
Section: Band Structure Of Hgte 2d Semimetalmentioning
confidence: 48%
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“…IV E, varying the total charge density n tot by gate voltage in an asymmetric system results in a variation of the corresponding band structure. While these effects play a major role in thicker samples [17], in our case, the differences between band structures calculated at boundary values of n tot are not significant with the accessible energy resolution. Therefore the experimental results are compared to a single theoretical band structure, that was obtained at a total density n tot = 5 • 10 11 cm −2 , i.e.…”
Section: Band Structure Of Hgte 2d Semimetalmentioning
confidence: 48%
“…The experimental resolution of the CR analysis did not allow to observe the spin-splitting of the H1 band. We note that the steeper slope of the experimental points e 1 at higher energies is probably a result of stronger structure-inversion asymmetry at high gate voltages [17]. At low energies, the carrier type h 1 nicely overlaps with the valence band H2 1 , which are spin-polarized and double-valley degenerate.…”
Section: Band Structure Of Hgte 2d Semimetalmentioning
confidence: 72%
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