Band-tail parameter modeling in semiconductor materials

Iribarren, A.; Castro-Rodrı́guez, R.; Sosa, Vı́ctor; Peña, J. L.

doi:10.1103/physrevb.58.1907

Cited by 36 publications

(25 citation statements)

References 18 publications

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“…The increase of this disorder leads to strong potential fluctuations 1 that result in an increase of the band-tail parameter E 0 given by the contributions of the phononcarrier and carrier-impurity interactions as well as the proper disorder. 2 Depending on the growth method and conditions, a semiconducting sample can be monocrystalline, polycrystalline, or amorphous. The two latter usually present a high concentration of defects and imperfections although they also exist in monocrystalline materials.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of the disorder contribution to the band-tail parameter in semiconductor materials

et al. 1999

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In this paper, we present a quantitative and analytical formulation of the disorder contributions to the band-tail parameter model in semiconductor materials with Urbach exponential behavior, which arise from the influence of the bulk and grain boundary trap concentration and strain. We based our calculation on the Halperin-Lax model combined with a recent model that considered the tail parameter E 0 as the sum of interactive and disorder contributions. The resulting formulation converged to the Dow-Redfield model, which supports its validity. Our theory, applied to experimental data, yields bulk-defect and grain-boundary trap concentrations in good agreement with reports for mono-and polycrystalline semiconductors. Our model can describe wholly the band-tail parameter of any semiconductor.

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Section: Introductionmentioning

confidence: 99%

“…2 As a result of this formulation, we describe the full dependence of E 0 on the disorder. Our result reproduces the prediction of Dow and Redfield 5 and from the experimental data we calculated the trap concentrations both in mono-and polycrystalline semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Modeling of the disorder contribution to the band-tail parameter in semiconductor materials

et al. 1999

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“…71 In our Li doped nanoparticles, we attribute the bandgap narrowing to the combined effects of disorder and the formation of band tails as described in other p-type systems. 41,63,72 Thus, we suggest that the narrowing of the bandgap occurs due to a structural disorder (defects), carrier-donor and carrier-acceptor impurity interactions, electron-phonon and hole-phonon interactions. At high Li doping concentrations, the impurity band merges with the valence band edge, and it becomes band tail states.…”

Section: -7mentioning

confidence: 99%

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

Awan¹,

Hasanain²,

Jaffari³

et al. 2014

Journal of Applied Physics

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Microstructural and optical properties of Zn 1Ày Li y O (0.00 y 0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518 6 2.5 nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26 6 0.014 to 3.17 6 0.018 eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. V C 2014 AIP Publishing LLC.[http://dx

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“…Frequently, this feature is associated roughly with crystallinity, but band-tail profile is mainly determined by density of allowed states generated by crystal defects in the forbidden band gap. In this regard, a correlation between the profile of the band tail and the density of charge carriers in semiconductor compounds has been suggested [50,51]. In the case of Zn-rich ZnO, the point defects with lower formation energy are oxygen vacancy (VO) and interstitial zinc (Zni) [52].…”

Section: Resultsmentioning

confidence: 99%

ZnO Micro- and Nanostructures Obtained by Thermal Oxidation: Microstructure, Morphogenesis, Optical, and Photoluminescence Properties

et al. 2016

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ZnO micro-and nanostructures were obtained through thermal oxidation of Zn powders at high temperature under air atmosphere. A detailed study of the microstructure, morphology, optical, and photoluminescence properties of the generated products at different stages of thermal oxidation is presented. It was found that the exposure time has a strong influence on the resulting morphology. The morphogenesis of the different ZnO structures is discussed, and experimental parameters for fabricating ZnO tetrapods, hollow, core-shell, elongated, or rounded structures by thermal oxidation method are proposed on the basis on the obtained results. Notoriously, the crystal lattice of the ZnO structures has negligible residual strain, although, the density of point defects increases when the thermal treatment is extended; as consequence, their visible luminescence upon UV excitation enhances.

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Band-tail parameter modeling in semiconductor materials

Cited by 36 publications

References 18 publications

Modeling of the disorder contribution to the band-tail parameter in semiconductor materials

Modeling of the disorder contribution to the band-tail parameter in semiconductor materials

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

ZnO Micro- and Nanostructures Obtained by Thermal Oxidation: Microstructure, Morphogenesis, Optical, and Photoluminescence Properties

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