2017
DOI: 10.1002/adfm.201700860
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Band‐Tail Recombination in Hybrid Lead Iodide Perovskite

Abstract: Traps limit the photovoltaic efficiency and affect the charge transport of optoelectronic devices based on hybrid lead halide perovskites. Understanding the nature and energy scale of these trap states is therefore crucial for the development and optimization of solar cell and laser technology based on these materials. Here, the low-temperature photoluminescence of formamidinium lead triiodide (HC(NH 2 ) 2 PbI 3 ) is investigated. A power-law time dependence in the emission intensity and an additional low-ener… Show more

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Cited by 148 publications
(161 citation statements)
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“…[2,39] This begins to flatten at ≈90 K, which is the temperature at which we observe the low temperature γ to β structural phase transition in the PXRD data. It can be seen that the Stokes shift increases in an approximately linear fashion with increasing temperature, starting from 3.19 meV at 10 K. The Stokes shift reaches a maximum of 7.83 meV at 220 K, where the trend reverses, and continues to drop up to 300 K. We note that the Stokes shift can provide a measure of the proportion of the PL emission that originates from subbandgap states, [41] therefore a large Stokes shift would suggest a very disordered or defect-ridden material. A similar effect has previously been observed in MAPbI 3 as it transforms to a low temperature orthorhombic phase.…”
Section: Absorption and Photoluminescencementioning
confidence: 71%
“…[2,39] This begins to flatten at ≈90 K, which is the temperature at which we observe the low temperature γ to β structural phase transition in the PXRD data. It can be seen that the Stokes shift increases in an approximately linear fashion with increasing temperature, starting from 3.19 meV at 10 K. The Stokes shift reaches a maximum of 7.83 meV at 220 K, where the trend reverses, and continues to drop up to 300 K. We note that the Stokes shift can provide a measure of the proportion of the PL emission that originates from subbandgap states, [41] therefore a large Stokes shift would suggest a very disordered or defect-ridden material. A similar effect has previously been observed in MAPbI 3 as it transforms to a low temperature orthorhombic phase.…”
Section: Absorption and Photoluminescencementioning
confidence: 71%
“…Given that TIPL of P2 scales super-quadratically with fluence and exhibits similar properties as P1, P2 is therefore likely due to free carrier recombination of band-tail states induced by indirect band gap, i.e., mechanism (1). [29,36] Regarding the origin of (I), the emission energy of DAP recombination can be expressed by [59] Apart from the double-peak feature of the band-edge PL, the low-temperature PL spectrum displays a broad sub-band-gap emission of P3 with full-width-at-half-maximum of ≈0.2 eV (Figure 1a).…”
Section: Fluence Dependence Of the Photoluminescencementioning
confidence: 99%
“…[39] Our detailed study shows that the classical DAP recombination model is inapplicable to the experimental data, which can lead to an invalid estimate of the donor and acceptor energy levels ( Figure S7, Supporting Information). [36] These localized traps have a significant influence on the band-edge carrier recombination kinetics of lead bromide perovskites. [40] Lastly, the typical DAP recombination kinetics is inconsistent with the stretched-exponential decay observed here ( Figure S8, Supporting Information).…”
Section: Fluence Dependence Of the Photoluminescencementioning
confidence: 99%
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