Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices

Abstract

Non-degenerately doped lateral nanoscale p-n and p-i-n silicon-on-insulator devices have been fabricated and characterized at room temperature (297 K). In both types of devices, p-type Si substrate is used as a backgate to modify the potential in the top Si layer in both forward- and reverse-bias regimes. In the forward-bias regime, both types of devices exhibit negative differential transconductance (NDT), with the current peak position and level controlled by the backgate and anode voltage. In the reverse-bias regime, the devices exhibit a sharp current increase as a function of the backgate voltage, which is a signature of the band-to-band tunneling (BTBT) mechanism. These findings suggest that NDT and the sharp increase of current, induced by the contribution of the BTBT mechanism, can be achieved even in non-degenerately doped backgated diodes, which opens new possibilities for BTBT-based functionalities, benefiting from a simple design and CMOS compatibility.

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

“…The accumulated scientific knowledge on Si offers a good foundation for rapid innovations to achieve remarkable Si‐based anti‐ambipolar characteristics. [ 162,163 ] In 2017, high‐performance Si‐based AATs devices were successfully fabricated using a CMOS‐compatible device fabrication process. These devices were based on p + ‐i‐n + Si ultrathin body transistors and exhibited distinct Λ‐shaped transfer characteristics while operating at room temperature.…”

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

“…The NDT phenomenon has been known for a long time and observed in various structures. [ 45–52 ] In 2016, Nourbakhsh et al. first applied a heterojunction NDT device for ternary logic.…”

“…The NDT phenomenon has been known for a long time and observed in various structures. [45][46][47][48][49][50][51][52] In 2016, Nourbakhsh et al first applied a heterojunction NDT device for ternary logic. [28] The NDT device channel was composed of two thin WSe 2 and MoS 2 flakes exfoliated from their crystals and mechanically transferred in a way that the WSe 2 flake was partially overlapped with the MoS 2 flake (Figure 3a).…”