Bandgap and lattice constant of GaInAsP as a function of alloy composition

Concentration and temperature dependence of the energy gap in some binary and alloy semiconductors

“…r 2 E 0 (x, y) = 0 [32], weighted average of the binary band [33], simple interpolation formula [34] and modified interpolation equation [35] have been used by different workers to calculate E g (x, y) in quaternary alloys. Shim and Rabitz [36] have proposed a model for the calculation of E g (x, y) in In 1Àx Ga x As 1Ày P y alloy lattice matched to InP and GaAs using the universal tight binding (UTB) method based on a modified pseudo cell (MPC) and correlated function expansion (CFE) [37].…”

“…Recently, Bechiri et al [39] have applied a pseudo-potential formalism coupled with the virtual crystal approximation to study the effect of composition disorder upon electronic band structure of cubic Ga x In 1Àx As y P 1Ày quaternary alloy lattice matched to InP. The models proposed by these workers [32][33][34][35][36][37][38][39][40] are complex in nature and require number of known parameters in their calculation. For the simplicity, we propose the following relation for the calculation E g (x, y) for In 1Àx Ga x As 1Ày P y quaternary alloy semiconductor, which is based on proposed Eq.…”

Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1–xGaxAsySb1–y epilayer on GaSb and InAs

“…Olsen et al [16] have obtained several material parameters from an interpolation scheme and found good agreement with the experimental data. Such an interpolation scheme is essentially based on the known values of the physical parameters for the related binary and ternary alloys [17]. Gera et al [18] and recently Ekpenuma et al [19] have calculated the CPA band structure for the quaternary alloys InGaAsSb using a tight-binding (TB) Hamiltonian incorporating the diagonal component of alloy disorder.…”

Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys

“…For the numerical techniques and analysis, the research on the materials bandgap developed slowly in the past decades and the correlative reports are very few. At the present, the Moon method proposed in 1974 is still the major way in the structure design and simulation, which has a low precision and cannot satisfy the modern optoelectronic apparatus requirements [7,8].…”