Bandgap energy of InN and its temperature dependence

Ishitani, Yoshihiro; Masuyama, Hidenori; Terashima, Wataru; Yoshitani, M.; Hashimoto, Naoki; Che, S.B.; Yoshikawa, Akihiko

doi:10.1002/pssc.200461433

Cited by 36 publications

(30 citation statements)

References 5 publications

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“…The component of the phonon and plasmon modes are refered to the previous reports [9]. We adopted the formula of the conduction band energy structure expressed in Eq.…”

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confidence: 99%

Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

Ishitani

Terashima

Che

et al. 2006

Phys. Status Solidi (c)

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The optical properties of hexagonal InN crystal are investigated by reflectance, absorption and photoluminescence method. With use of the theoretical formula of these spectra, both of conduction and valence band properties are analysed. As a result, the average effective electron and hole mass values at the band edge are found to be about 0.046(±0.01)m 0 and 0.2(±0.05)m 0 , respectively. The photoluminescence emitted from the cleaved edge was strongly polarized. The agreement of the peak energies of π and σ polarized light means that A, B, and C band edges are closely located in energy space.1 Introduction The optical bandgap of InN was found to be less than 1 eV a few years ago [1]. At present there are many studies toward the device application. So far, several values for the effective electron mass (m e ), dielectric constant at the infinite frequency (ε ∞ ), and bandgap energy (E g ) have been reported. For example, the effective electron mass of 0.4m 0 (m 0 : free electron mass) is estimated theoretically [2], while several value of 0.7m 0 , 0.5m 0 , 0.85m 0 are reported experimentally [3][4][5]. Optical studies of reflectance, absorption, photoluminescence, and so forth are adopted to characterize the band edge structures. Theoretically, Kane's non-parabolic conduction band energy structure [6]. Neverthless, there are few studies discussing the consistency of the results obtained by these methods and the theoretical study. Arnaudov et al. studied the free to bound recombination processes with the photoluminescence spectra [7]. They suggested the average hole mass value of 0.3m 0 . Goldhahn et al. investigated the the dielectric function for InN by ellipsometry, and found the optical anisotropic nature caused by the splitting of the hole states [8]. However the detail energitic structure is not shown for valence bands. We have investigated the optical refletance and absorption spectra, and reported that both of reflectance and absorption spectra were explained by the VB to CB transition using apparent transition matrix element for samples with various n e [9]. However, we have not examined the effects of hole properties on these spectral analysis. Further, the polarization measurements have not been tried on absorption and luminescence spectra, which is usually adopted to investigate the hole energy structure.

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“…The component of the phonon and plasmon modes are refered to the previous reports [9]. We adopted the formula of the conduction band energy structure expressed in Eq.…”

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confidence: 99%

Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

Ishitani

Terashima

Che

et al. 2006

Phys. Status Solidi (c)

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“…[1][2][3][4] Especially, InGaN/GaN multiple quantum wells ͑MQWs͒ became indispensable commercial solid-state lighting sources in the green/blue/ violet spectral regions. In addition, since the InN bandgap was reported as low as ϳ0.63 eV, 4,5 InN-based III nitrides have recently attracted much attention for extended potential application in a wide range of optoelectronic devices. For the realization of these devices, many groups have studied on the high quality InN and In-rich InGaN nanostructures, including quantum wells 6 ͑QWs͒ and quantum dots 7 grown by metalorganic chemical vapor deposition ͑MOCVD͒ and molecular beam epitaxy.…”

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confidence: 99%

Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Kwack

Kwon

Chung

et al. 2008

Applied Physics Letters

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We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%–70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/cm2.

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“…In recent years InN has been extensively studied because it has a fundamental bandgap of 0.6-0.7 eV [1], which is suitable for the applications in optoelectronic devices in the optical fiber communication wavelengths. While sapphire has been widely used as the substrate for the growth of InN, SiC [2][3][4] is also a promising candidate because of its electrical conduction and high thermal conductivity, which are useful for device applications.…”

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confidence: 99%

RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

Orihara

Takizawa

Sato

et al. 2010

Phys. Status Solidi (c)

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We have grown InN on 4H‐SiC (0001) substrates with various off‐angles by RF‐N2 plasma molecular beam epitaxy (RF‐MBE). Scanning electron microscope observation revealed that InN films grown on 4H‐SiC (0001) substrates with off‐angles of 4° and 8° are very smooth and that there are no voids which have often observed for InN epitaxial layers. X‐ray diffraction reciprocal space maps for InN grown on 4H‐SiC (0001) showed that the c‐axes of InN grown on 4H‐SiC 4° and 8° off substrates are inclined by 0.35° and 0.8°, respectively, toward the misorientation of the substrate while the c‐axis of InN is parallel to that of 4H‐SiC for the on‐axis substrate. Strong PL peak was observed from InN grown on 4° off substrate at 0.68 eV at 15 K. The PL peak was clearly observed even at room temperature and simply shifted to lower energies with increasing temperature. The difference in the PL peak energy between at 15 K and 300 K was 20 meV, which is reasonable taking into account the difference in the thermal coefficients of InN and SiC (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Bandgap energy of InN and its temperature dependence

Cited by 36 publications

References 5 publications

Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

RF‐MBE growth of InN on 4H‐SiC (0001) with off‐angles

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