Bandgap engineering of a lead-free defect perovskite Cs3Bi2I9through trivalent doping of Ru3+

Gu, Jin-Yu; Yan, Gangbin; Lian, Yuebin; Mu, Qiaoqiao; Jin, Huidong; Zhang, Zaichao; Deng, Zhao; Peng, Yang

doi:10.1039/c8ra04422h

Cited by 66 publications

(64 citation statements)

References 40 publications

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“…Moreover, they pointed out that P

\overset{3}{true}

m 1 symmetry is the key to achieve highly efficient lead‐free perovskite solar cells with trivalent metal ions. In 2018, Peng et al obtained Ru 3+ ‐doped Cs 3 Bi 2 I 9 single crystals by the hydrothermal method and found that the direct and indirect bandgap values of Cs 3 Bi 2 I 9 (2.07 and 1.98 eV) could be reduced to 1.98 and 1.81 eV, respectively, as shown in Figure c,d. Besides, I − ion was employed to substitute Br − in layered Cs 3 Bi 2 Br 9 , and the researcher found the bandgap reduced to 2.05 from 2.66 eV in the layered Cs 3 Bi 2 Br 3 I 6 .…”

Section: Ternary Bismuth Halidesmentioning

confidence: 99%

From Pb to Bi: A Promising Family of Pb‐Free Optoelectronic Materials and Devices

Zhang

Liu

et al. 2019

Advanced Energy Materials

136

116

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Lead‐based organic–inorganic hybrid perovskite materials are widely used in optoelectronic devices due to their excellent photophysical properties. However, the main issues which hinder its commercialization are the toxicity caused by lead and the intrinsic instability of the material. Recently, many lead‐free halide materials with good intrinsic stability have been reported, among which bismuth‐based halide materials have attracted extensive research due to their structure and promising optoelectronic properties. In this review, bismuth‐based materials are divided into binary BiX3 (X = I, Br, Cl), ternary AaBibXa+3b (A = Cs, Rb, MA, Ag, etc.), and quaternary A2AgBiX6 (A = Cs, Rb, MA, etc.) according to its elemental composition. The structure and optoelectronic properties of bismuth‐based halide materials, which may be helpful for the development of bismuth‐based halide materials and lead‐free perovskites in the future, are summarized and highlighted.

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“…Moreover, they pointed out that P

\overset{3}{true}

Section: Ternary Bismuth Halidesmentioning

confidence: 99%

From Pb to Bi: A Promising Family of Pb‐Free Optoelectronic Materials and Devices

Zhang

Liu

et al. 2019

Advanced Energy Materials

136

116

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“…Hong et al predicted theoretically In(III) might be better performer compare to Ga(III) as conduction band minimum of Cs 3 Bi 2−x In x I 9 shows well developed extended states between Bi‐I and In‐I bond . Doping of Ru(III) also results in decrease in band gap of Cs 3 Bi 2 I 9 and also narrowed optical bandgap, induced shallow defect states, and more radiative recombination centres …”

Section: Bismuth Perovskitesmentioning

confidence: 99%

“…[75] Doping of Ru(III) also results in decrease in band gap of Cs 3 Bi 2 I 9 and also narrowed optical bandgap, induced shallow defect states, and more radiative recombination centres. [76]…”

Section: Bismuth Perovskitesmentioning

confidence: 99%

Lead‐Free Metal Halide Perovskite Nanocrystals: Challenges, Applications, and Future Aspects

Ghosh

Pradhan

2019

ChemNanoMat

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Lead halide perovskite materials have shown strong promise in energy harvesting and generation over the past five years. However, their poor ambient stability and lead toxicity issues hinder optoelectronic applications. In the quest for alternatives, metal halide perovskites with lower toxicity and more stable metals have recently emerged. The divalent Pb2+ could be replaced with isoelectronic Sn2+, but Sn2+ tends to oxidize rapidly in presence of air to Sn4+, forming a defect in the structure. However, Sn2+‐based perovskites have been stabilized in 2D structures. Recently Sn4+ based halide perovskites nanocrystals with have been reported with poor luminescence. The replacement of Pb2+ with isoelectronic trivalent elements (Sb3+, Bi3+) results in A3B2X9 type defect‐order perovskite structure, which shows promises for optoelectronic applications. The perovskite nanocrystals of Sb, Bi have been reported in the form of dimers and layered structures. In addition to these, double perovskites, where two divalent Pb2+ are replaced with a monovalent and a trivalent cation have been reported very recently. In this Focus Review, we give a brief summary of different non‐lead perovskite nanocrystals starting from synthesis, characterization, stability, properties to applications, along with potential future directions.

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“…Recently, Ru was used to partially replace Bi in Cs 3 Bi 2 I 9 to regulate its band gap and defect states by using a hydrothermal method. The Ru‐doped Cs 3 Bi 2 I 9 showed a narrowed band gap along with a considerable color change from bright to dark red with increasing doping level (Figure c) . In addition, the dopant‐induced shallow defect states and enhanced phonon–electron coupling lead to an overall upshift of the band structure, indicating a promising way to tune the optoelectronic properties of the defective Bi‐based material by partial element substitution.…”

Section: Bandgap Engineeringmentioning

confidence: 99%

“…c) Photos of samples of Cs 3 Bi 2 I 9 showing darkenedc olor with increasing Ru 3 + doping. Reprinted with permissionfrom Ref [55]…”

mentioning

confidence: 99%

Bismuth Halide Perovskite‐Like Materials: Current Opportunities and Challenges

2019

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Metal halide perovskites have recently emerged as promising photovoltaic materials for application in solar cells with high power conversion efficiencies exceeding 23 %. In the years since such high efficiencies have been attained, investigations have mainly focused on the state‐of‐the‐art 3 D Pb‐based halide perovskite materials. However, the high toxicity of Pb and intrinsic instability of the pristine perovskite materials have become great obstacles to their industrial application and commercialization. To address these serious issues, it is imperative to explore low‐toxicity metal halide perovskites or their derivatives to substitute Pb‐based materials for better future development. Currently, Bi‐based halide perovskite‐like materials are attracting increased interest as environmentally friendly alternatives for photovoltaic applications. This Concept highlights recent advances of Bi‐based halide perovskite‐like materials in terms of understanding and modifying their fundamental properties and related device performance, with a focus on current challenges, opportunities for future development, and diversification of device applications.

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Bandgap engineering of a lead-free defect perovskite Cs₃Bi₂I₉through trivalent doping of Ru³⁺

Abstract: Inorganic defect halide compounds such as Cs3Bi2I9 have been regarded as promising alternatives to overcome the instability and toxicity issues of conventional perovskite solar cells.

Cited by 66 publications

References 40 publications

From Pb to Bi: A Promising Family of Pb‐Free Optoelectronic Materials and Devices

From Pb to Bi: A Promising Family of Pb‐Free Optoelectronic Materials and Devices

Lead‐Free Metal Halide Perovskite Nanocrystals: Challenges, Applications, and Future Aspects

Bismuth Halide Perovskite‐Like Materials: Current Opportunities and Challenges

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