Bandgap evolution of GaN1−x As x in the whole composition range

Zhao, Chuan‐Zhen; Li, Nana; Wei, Tong; Wang, Shasha; Lu, Keqing

doi:10.1007/s00339-013-7891-0

Cited by 9 publications

(7 citation statements)

References 15 publications

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“…28 The approach predicted overall trends but significantly overestimated the band gap reductions for alloys with mid-range compositions. The main deficiencies of the model were that it ignored the composition dependence of the coupling parameter and assumed that the BAC interactions fully determine the shifts of the conduction and the valence band edge.…”

mentioning

confidence: 94%

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Segercrantz

Min

et al. 2015

Applied Physics Letters

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In this letter, we study the optical properties of GaN1−xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1−xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.

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confidence: 94%

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Segercrantz

Min

et al. 2015

Applied Physics Letters

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“…The GaAsN alloy is nearly lattice‐matched with a GaAs substrate and has been featured due to its specific characteristics represented by drastic bandgap reduction in a dilute nitrogen composition ([N]) region ([N] ≦ 3%). [ 1–4 ] Therefore, this GaAsN alloy has been used for some devices such as a near‐infrared wavelength laser with a nanowire based on GaAsN [ 5 ] and a multi junction solar cell using a GaAsSb/GaAsN superlattice [ 6,7 ] or an InGaAsN. [ 8 ] Especially, this GaAsN is expected to be applicable for a 1.0 eV zone material in a multi junction solar cell on a GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Mechanism in Heavily Si‐Doped GaAsN

Tsukasaki

Hiyoshi

Fujita

et al. 2021

Crystal Research and Technology

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The photoluminescence (PL) mechanism is discussed for heavily Si‐doped GaAsN, and the evaluation method of electron effective mass (me*) is proposed using its PL peak energy. PL peak energy monotonically decreases as increasing temperature, so the S‐shape characteristic is vanished for this heavily Si‐doped GaAsN as opposed to moderately Si‐doped GaAsN. This result shows that the dominant PL process is an optical transition from the Fermi energy to the top of valence band independent of temperature for this heavily Si‐doped GaAsN, as with degenerate n‐type GaAs. Because PL peak energy is expressed by the sum of bandgap energy, the increased energy of the Burstein–Moss effect, and the decreased energy of the bandgap narrowing, me* is calculated to be 0.098 m0 for this heavily Si‐doped GaAsN with nitrogen composition of 0.6%, where m0 is the electron mass. This result agrees well with previous studies, meaning that the method for estimation of me is effective for dilute GaAsN.

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“…Using the phonon transmission function, elastic and inelastic ITC can be calculated by eqn (6). As shown in Fig.…”

Section: Impact Of the Number Of Nanoparticles' On Itcmentioning

confidence: 99%

“…[1][2][3][4][5] Therefore, improving the ITC is an important way to improve the heat dissipation performance. 6,7 Over the past few decades, there has been a great deal of research into the improvement of interfacial heat transport. [8][9][10] Changing interface roughness, [11][12][13][14] interface structure, 15,16 and bond strength are most common.…”

Section: Introductionmentioning

confidence: 99%